IRF640NPBF vs IPP600N25N3GXKSA1 Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IPP600N25N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IPP600N25N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-to-Source Voltage (VDS) | 200 V | 250 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 136 W |
| Total Gate Charge (Qg) | 44.7 nC | [DATA_NEEDED: Qg typical value] |
| Operating Junction Temperature | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | MOSFET (Metal Oxide) |
| Transistor Type | N-Channel Enhancement Mode | — |
| Package | TO-220AB (through-hole, 3-pin) | — |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Package / Case | — | TO-220-3 (PG-TO220-3-1) |
| Operating Temperature Range | — | -55C to +175C (junction) |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| Pin Count | — | 3 (Gate, Drain, Source) |