IRF640NPBF vs IPP600N25N3GXKSA1 비교
다음의 상세 나란히 비교: IRF640NPBF 제조: Infineon 및 IPP600N25N3GXKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF640NPBF | IPP600N25N3GXKSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $1.62 |
| Drain-to-Source Voltage (VDS) | 200 V | 250 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 136 W |
| Total Gate Charge (Qg) | 44.7 nC | [DATA_NEEDED: Qg typical value] |
| 동작 접합 온도 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | MOSFET (Metal Oxide) |
| 트랜지스터 유형 | N-Channel Enhancement Mode | — |
| 패키지 | TO-220AB (through-hole, 3-pin) | — |
| 실장 유형 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 패키지 / 케이스 | — | TO-220-3 (PG-TO220-3-1) |
| 동작 온도 범위 | — | -55C to +175C (junction) |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| 핀 수 | — | 3 (Gate, Drain, Source) |