IRFB7534PBF vs IRFS7530TRLPBF 对比
详细并排对比 IRFB7534PBF 出自 Infineon 和 IRFS7530TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB7534PBF | IRFS7530TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB7534PBF | IRFS7530TRLPBF |
| Technology | StrongIRFET™ (planar N-channel) | StrongIRFET™ (N-Channel Trench MOSFET) |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| 封装 | TO-220AB | — |
| 安装类型 | Through Hole | Surface Mount |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C (Tj) |
| RoHS 状态 | Compliant (PbF suffix) | — |
| MSL 等级 | MSL1 (unlimited floor life) | — |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2 mΩ |
| Gate Charge Qg Typ | — | [DATA_NEEDED: typical gate charge] |
| Total Power Dissipation (PD) at Tc=25°C | — | 375 W |
| 封装 / 外壳 | — | PG-TO263-2 (D2PAK, TO-263) |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Pin Configuration | — | 3-Pin (Gate, Drain tab, Source) |
| Series | — | StrongIRFET™ |