IRFP250MPBF vs IRFP2907PBF 对比

详细并排对比 IRFP250MPBF 出自 Infineon 和 IRFP2907PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP250MPBF IRFP2907PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $2.45
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP250MPBF IRFP2907PBF
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
工作结温 -55C to +175C —
封装 / 外壳 TO-247AC (3-pin + tab) —
安装类型 Through Hole —
引脚数 3 —
Avalanche Rated Yes Yes (repetitive avalanche rated)
RoHS 状态 Compliant —
Lead-Free Yes Yes
MSL 等级 1 (unlimited) —
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
引脚数量 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Body Diode — Integral (no external anti-parallel diode required)

数据手册与资源

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