IRFP250MPBF vs IRFP2907PBF Comparison

Detailed side-by-side comparison of IRFP250MPBF by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP250MPBF IRFP2907PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $2.45
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP250MPBF IRFP2907PBF
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (Vds) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) β€”
Total Gate Charge (Qg) 82 nC β€”
Power Dissipation (Pd) at Tc=25C 214 W β€”
Operating Junction Temperature -55C to +175C β€”
Package / Case TO-247AC (3-pin + tab) β€”
Mounting Type Through Hole β€”
Number of Pins 3 β€”
Avalanche Rated Yes Yes (repetitive avalanche rated)
RoHS Status Compliant β€”
Lead-Free Yes Yes
MSL Level 1 (unlimited) β€”
Drain-to-Source Voltage (V_DSS) β€” 75 V
Continuous Drain Current (I_D) at T_C = 25 C β€” 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) β€” 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C β€” 470 W
Total Gate Charge (Q_g) β€” 410 nC
Maximum Junction Operating Temperature β€” +175 C
Package / Mounting Type β€” TO-247AC (Through Hole)
Pin Count β€” 3 (Gate, Drain, Source)
RoHS Compliance β€” Yes (Pb-free)
Body Diode β€” Integral (no external anti-parallel diode required)

Datasheets & Resources

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