IRFP250MPBF vs IRFP2907PBF 比較
詳細な並列比較: IRFP250MPBF メーカー: Infineon および IRFP2907PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFP250MPBF | IRFP2907PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.55 | $2.45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFP250MPBF | IRFP2907PBF |
| トランジスタタイプ | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Stripe Planar DMOS (N-Channel) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ / ケース | TO-247AC (3-pin + tab) | — |
| 実装タイプ | Through Hole | — |
| ピン数 | 3 | — |
| Avalanche Rated | Yes | Yes (repetitive avalanche rated) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | Yes |
| MSLレベル | 1 (unlimited) | — |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| ピン数 | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Body Diode | — | Integral (no external anti-parallel diode required) |