IRS21834STRPBF vs IR2117STRPBF 对比

详细并排对比 IRS21834STRPBF 出自 Infineon 和 IR2117STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 量产中

规格对比

参数 IRS21834STRPBF IR2117STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.58
Configuration Half-Bridge High-Side Single Channel
Number of Drivers 2 (high-side + low-side) —
Input Logic Inverting, Non-Inverting with Shutdown —
Maximum Offset Voltage (High-Side) 600 V —
Gate Drive Supply (VCC, VBS) 10 V to 20 V —
Source Current (typ.) 1.9 A —
Sink Current (typ.) 2.3 A —
Propagation Delay (typ.) 200 ns —
Delay Matching (max) ±50 ns —
Undervoltage Lockout (VCC, VBS) Yes —
Negative Transient Voltage Tolerance dV/dt immune Yes, dV/dt immune
工作温度范围 -40C to +125C -40 C to +125 C
封装 14-SOIC (SOIC-14) —
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) MSL3 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
功能 — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
输出数量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升时间 — 80 ns (typ)
下降时间 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
封装 / 外壳 — 8-SOIC (0.154 inch / 3.90 mm width)

数据手册与资源

浏览全部产品 创建 BOM 获取报价