K4A4G085WD-BCRC vs K4A4G085WD-BCTD 对比
详细并排对比 K4A4G085WD-BCRC 出自 Samsung Electronics 和 K4A4G085WD-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 量产中规格对比
| 参数 | K4A4G085WD-BCRC | K4A4G085WD-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.58 | $2.05 |
| Memory Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 存储器类型 | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| 数据速率 | 2400 Mb/s (PC2400) | 2666 Mbps/pin |
| 电源电压 | 1.2 V | 1.2 V |
| 封装 | FBGA-78 (TFBGA) | 78-ball FBGA |
| Number of Terminals | 78 | — |
| 接口 | Parallel | DDR4 (JEDEC-compatible) |
| Access Mode | Multi-bank page burst | — |
| 安装类型 | Surface Mount | Surface Mount |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| 工作温度范围 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| MSL 等级 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| 工作温度 | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |