K4A4G085WD-BCRC vs K4A4G085WD-BCTD Comparison
Detailed side-by-side comparison of K4A4G085WD-BCRC by Samsung Electronics and K4A4G085WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G085WD-BCRC | K4A4G085WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.58 | $2.05 |
| Memory Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Memory Type | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Data Rate | 2400 Mb/s (PC2400) | 2666 Mbps/pin |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | FBGA-78 (TFBGA) | 78-ball FBGA |
| Number of Terminals | 78 | — |
| Interface | Parallel | DDR4 (JEDEC-compatible) |
| Access Mode | Multi-bank page burst | — |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Operating Temperature Range | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Operating Temperature | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |