K4A8G045WB-BCRC vs K4A8G085WB-BICR 对比

详细并排对比 K4A8G045WB-BCRC 出自 Samsung Electronics 和 K4A8G085WB-BICR 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ 量产中
Samsung Electronics
K4A8G085WB-BICR K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR ✓ 量产中

规格对比

参数 K4A8G045WB-BCRC K4A8G085WB-BICR
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $4.25
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 2G x 4 1G x 8
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
接口 CMOS, differential clock (CK/CK#) —
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
工作温度 0 C to 85 C —
封装 78-ball FBGA (PBGA78) 78-ball FBGA
Terminals 78 —
安装类型 Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
RoHS 状态 Compliant Compliant
数据速率 — 2400 Mbps
电源电压 — 1.2 V (VDD/VDDQ)
Number of Banks — 16
引脚数量 — 78
Temperature Grade — Industrial (I-grade)
工作温度范围 — [DATA_NEEDED: exact temperature range for BICR industrial suffix]
Die / Process — Samsung 8Gb B-die DDR4
Speed Grade — DDR4-2400 (PC4-19200)
Lead-Free — Yes
Refresh Management — Row refresh, auto-refresh and self-refresh supported

数据手册与资源

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