K4A8G045WB-BCRC vs K4A8G085WB-BICR Comparison
Detailed side-by-side comparison of K4A8G045WB-BCRC by Samsung Electronics and K4A8G085WB-BICR by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ ActiveSamsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ ActiveSpecification Comparison
| Parameter | K4A8G045WB-BCRC | K4A8G085WB-BICR |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 2G x 4 | 1G x 8 |
| Speed | 2400 Mbps | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V | — |
| Process Technology | Samsung B-die | — |
| Interface | CMOS, differential clock (CK/CK#) | — |
| Refresh Cycles | 8192 | 8192 |
| Maximum Supply Current | 211.7 mA | — |
| Operating Temperature | 0 C to 85 C | — |
| Package | 78-ball FBGA (PBGA78) | 78-ball FBGA |
| Terminals | 78 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset | — |
| DLL Mode | Timing specified for DLL-enabled operation | — |
| RoHS Status | Compliant | Compliant |
| Data Rate | — | 2400 Mbps |
| Supply Voltage | — | 1.2 V (VDD/VDDQ) |
| Number of Banks | — | 16 |
| Pin Count | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| Operating Temperature Range | — | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |