K4A8G085WB-BCPB vs K4A8G085WC 对比

详细并排对比 K4A8G085WB-BCPB 出自 Samsung Electronics 和 K4A8G085WC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ 量产中
Samsung Electronics
K4A8G085WC K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC ✓ 量产中

规格对比

参数 K4A8G085WB-BCPB K4A8G085WC
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $13.78 $24.90
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gbit
存储组织 1G x 8 1G x 8
电源电压 1.2 V (nominal) 1.2 V
数据速率 3200 Mbps (PC4-25600) —
Speed Grade BC —
CAS Latency (CL) 22 —
Burst Length 8 —
Bank Architecture 16 banks (4 bank groups) —
Refresh Interval 7.8 us (up to 85C) —
接口类型 SSTL-12 —
Termination ODT / dynamic ODT —
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) —
封装 78-ball FBGA 78-ball FBGA (78FBGA)
Package Dimensions 11 mm x 11 mm —
安装类型 Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Speed — 2666 Mbps/pin (DDR4-2666)
Supply Voltage Range — 1.14 V to 1.26 V
Clock Frequency — 1333 MHz (1333.333 GHz nominal, per web data)
Operating Temperature (K4A8G085WC-BITD) — -40 C to +95 C
Operating Temperature (K4A8G085WC-BCTD) — 0 C to +95 C
Auto Precharge — Yes
Asynchronous Reset — Yes
CRC Function — Yes
ZQ Calibration — Yes
Dynamic On-Chip Termination (ODT) — Yes
Data Mask (DM) — Yes

数据手册与资源

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