K4A8G085WB-BCPB vs K4A8G085WC Comparison

Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G085WC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ Active
Samsung Electronics
K4A8G085WC K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC ✓ Active

Specification Comparison

Parameter K4A8G085WB-BCPB K4A8G085WC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $13.78 $24.90
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gbit
Organization 1G x 8 1G x 8
Supply Voltage 1.2 V (nominal) 1.2 V
Data Rate 3200 Mbps (PC4-25600) —
Speed Grade BC —
CAS Latency (CL) 22 —
Burst Length 8 —
Bank Architecture 16 banks (4 bank groups) —
Refresh Interval 7.8 us (up to 85C) —
Interface Type SSTL-12 —
Termination ODT / dynamic ODT —
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) —
Package 78-ball FBGA 78-ball FBGA (78FBGA)
Package Dimensions 11 mm x 11 mm —
Mounting Type Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Speed — 2666 Mbps/pin (DDR4-2666)
Supply Voltage Range — 1.14 V to 1.26 V
Clock Frequency — 1333 MHz (1333.333 GHz nominal, per web data)
Operating Temperature (K4A8G085WC-BITD) — -40 C to +95 C
Operating Temperature (K4A8G085WC-BCTD) — 0 C to +95 C
Auto Precharge — Yes
Asynchronous Reset — Yes
CRC Function — Yes
ZQ Calibration — Yes
Dynamic On-Chip Termination (ODT) — Yes
Data Mask (DM) — Yes

Datasheets & Resources

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