K4A8G165WC-BCRC vs K4A8G165WC-BCPB 对比
详细并排对比 K4A8G165WC-BCRC 出自 Samsung Electronics 和 K4A8G165WC-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WC-BCRC | K4A8G165WC-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $23.00 | $1.31 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 2400 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VPP Voltage | 2.5 V | — |
| 工作温度 | 0°C to +95°C (case) | 0C to +95C |
| 封装 | 96-ball FBGA (9mm x 13mm) | 96-ball FBGA (TFBGA) |
| 接口 | 16-bit I/O | DDR4 (16-bit data bus) |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | — |
| CAS 延迟 | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | — |
| RoHS | Compliant | — |
| 安装类型 | Surface Mount | Surface Mount |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| 电源电压 | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm class) |
| 特性 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| RoHS 状态 | — | Compliant |
| Standard | — | JEDEC DDR4 SDRAM |