K4A8G165WG-BCWE vs MT40A512M16AD-062E 对比
详细并排对比 K4A8G165WG-BCWE 出自 Samsung Electro-Mechanics 和 MT40A512M16AD-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ 量产中Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ 量产中规格对比
| 参数 | K4A8G165WG-BCWE | MT40A512M16AD-062E |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $29.53 | $9.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| 数据速率 | 3200 Mbps | — |
| 电源电压 | 1.2 V | [DATA_NEEDED: core supply voltage (VDD)] |
| 工作温度范围 | 0°C to +85°C | — |
| Operating Current | 20 mA | — |
| 封装 | FBGA-96 | 96-FBGA (7.5 mm x 13.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Row Cycle Time (tRC) | 19 ns | — |
| Technology | B-die | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| 生命周期状态 | Active | — |
| 存储组织 | — | 512M x 16 |
| Clock Frequency | — | 1.6 GHz |
| Access Time (Row Cycle) | — | 19 ns |
| 接口 | — | Parallel (POD) |
| Automotive Qualification | — | AUT:E (automotive variant) |
| Speed Grade | — | -062E |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Prefetch Architecture | — | 8n with bank groups |
| HS Code (USHTS) | — | 8542320071 |
| Standard Pack Quantity | — | [DATA_NEEDED: reel quantity] |