K4A8G165WG-BCWE vs MT40A512M16AD-062E Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and MT40A512M16AD-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ ActiveMicron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | MT40A512M16AD-062E |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $29.53 | $9.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps | — |
| Supply Voltage | 1.2 V | [DATA_NEEDED: core supply voltage (VDD)] |
| Operating Temperature Range | 0°C to +85°C | — |
| Operating Current | 20 mA | — |
| Package | FBGA-96 | 96-FBGA (7.5 mm x 13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Row Cycle Time (tRC) | 19 ns | — |
| Technology | B-die | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Lifecycle Status | Active | — |
| Organization | — | 512M x 16 |
| Clock Frequency | — | 1.6 GHz |
| Access Time (Row Cycle) | — | 19 ns |
| Interface | — | Parallel (POD) |
| Automotive Qualification | — | AUT:E (automotive variant) |
| Speed Grade | — | -062E |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| Prefetch Architecture | — | 8n with bank groups |
| HS Code (USHTS) | — | 8542320071 |
| Standard Pack Quantity | — | [DATA_NEEDED: reel quantity] |