K4B4G1646D-BCK0 vs MT41K256M16TW-107 对比
详细并排对比 K4B4G1646D-BCK0 出自 Samsung Electronics 和 MT41K256M16TW-107 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BCK0 | MT41K256M16TW-107 |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $14.10 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| 数据速率 | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 933 MHz (DDR3L-1866) |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| CAS 延迟 | 11 (programmable) | — |
| Burst Length | 8, 4 | — |
| 封装 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (8x14 mm) |
| 工作温度 | 0°C to 95°C (Tc) | 0C to +95C (commercial :P grade) |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| 存储容量 | — | 4 Gbit |
| 接口 | — | Parallel |
| Access Time | — | 20 ns |
| 电源电压 | — | 1.35 V |
| 数据总线宽度 | — | 16 bit |
| 安装类型 | — | Surface Mount |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |