K4B4G1646D-BYH9 vs NT5CC256M16DN-FLNA 对比
详细并排对比 K4B4G1646D-BYH9 出自 Samsung Electronics 和 NT5CC256M16DN-FLNA 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ 量产中
规格对比
| 参数 | K4B4G1646D-BYH9 | NT5CC256M16DN-FLNA |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $6.00 |
| Density | 4 Gb | 4Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1333 Mbps | 1600 Mbps (PC3-12800) |
| 电源电压 | 1.35 V | — |
| 工作温度 | 0 ~ 85 °C | — |
| 封装 | 96FBGA | 96-ball FBGA |
| Number of Banks | 8 | — |
| CAS 延迟 | Programmable | 11 |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| 存储器类型 | — | DDR3L SDRAM |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (1.283V-1.45V) |
| Backward Compatible Voltage | — | 1.5V ±0.075V |
| Burst Length | — | 8 |
| 工作温度范围 | — | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) |
| 接口 | — | 16-bit I/O |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS | — | Compliant |