W634GU6RB09J - 4Gb DDR3L SDRAM x16 1066MHz | Winbond
料号： W634GU6RB09J ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
W634GU6RB09J 概述
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is backward-compatible with DDR3 and is widely used in laptops, servers, and industrial electronics where energy efficiency is critical.
Key features include a 4Gbit density, x16 organization, 1.067 GHz clock speed, and a CAS latency of 20 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to +95°C (case temperature) and is RoHS compliant. The 96-VFBGA package measures 7.5x13mm with a 0.8mm ball pitch, enabling high-density PCB layouts.
Technically, the W634GU6RB09J uses a 30nm-class process technology, achieving low power and high speed. It features internal calibration for ZQ, write leveling, and read leveling to ensure signal integrity at high frequencies. The device supports auto-refresh and self-refresh modes, reducing standby power. Its low voltage operation and advanced power management make it suitable for battery-powered devices.
Typical applications include mobile computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and smart TVs. The high density and low power make it ideal for systems requiring large memory capacity with minimal energy consumption.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1066MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
直接替换替代料： W634GU6RB09J ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： W634GU6RB09J （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Operating Temperature, CAS Latency, Supply Voltage.
快速对比工具——选择替代料号进行并排对比：
W634GU6RB-09
✅ 直接替换✓ 有现货
$9.69 / 个
查看数据手册 →W634GU6RB12J
✅ 直接替换✓ 有现货
$6 / 个
查看数据手册 →W634GU6RB11J
✅ 直接替换✓ 有现货
$9.5 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →K4B4G1646D-BYK00
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.5 / 个
查看数据手册 →NT5CC256M16DP-DI
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.5 / 个
查看数据手册 →W634GU6RB09J 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4Gbit (256M x 16) |
| 数据速率 | 1066 MHz (DDR3L-2133) |
| 电源电压 | 1.35V |
| CAS 延迟 | 20 ns |
| 封装 | 96-VFBGA (7.5x13mm) |
| 工作温度 | 0°C to +95°C (Tc) |
| 接口 | Parallel |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| 无卤 | Yes |
| 存储组织 | 256M x 16 |
| Burst Length | 8 and 4 |
| 引脚数 | 96 |
| Ball Pitch | 0.8 mm |
W634GU6RB09J 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | VSS — Ground |
| 引脚 B1 | DQ1 — Data input/output 1 |
| 引脚 B2 | VDDQ — I/O power supply |
| 引脚 B3 | DQ2 — Data input/output 2 |
| 引脚 C1 | DQ3 — Data input/output 3 |
| 引脚 C2 | VSSQ — I/O ground |
| 引脚 C3 | DQ4 — Data input/output 4 |
| 引脚 D1 | DQ5 — Data input/output 5 |
| 引脚 D2 | VDD — Power supply |
| 引脚 D3 | DQ6 — Data input/output 6 |
| 引脚 E1 | DQ7 — Data input/output 7 |
| 引脚 E2 | VSS — Ground |
| 引脚 E3 | DQS0 — Data strobe 0 |
| 引脚 F1 | DQS0# — Data strobe 0 complement |
| 引脚 F2 | VDDQ — I/O power supply |
| 引脚 F3 | A0 — Address input 0 |
| 引脚 G1 | A1 — Address input 1 |
| 引脚 G2 | VSS — Ground |
| 引脚 G3 | A2 — Address input 2 |
| 引脚 H1 | A3 — Address input 3 |
| 引脚 H2 | VDD — Power supply |
| 引脚 H3 | A4 — Address input 4 |
| 引脚 J1 | A5 — Address input 5 |
| 引脚 J2 | VSS — Ground |
| 引脚 J3 | A6 — Address input 6 |
| 引脚 K1 | A7 — Address input 7 |
| 引脚 K2 | VDDQ — I/O power supply |
| 引脚 K3 | A8 — Address input 8 |
| 引脚 L1 | A9 — Address input 9 |
| 引脚 L2 | VSS — Ground |
| 引脚 L3 | A10 — Address input 10 |
| 引脚 M1 | A11 — Address input 11 |
| 引脚 M2 | VDD — Power supply |
| 引脚 M3 | A12 — Address input 12 |
| 引脚 N1 | BA0 — Bank address 0 |
| 引脚 N2 | VSS — Ground |
| 引脚 N3 | BA1 — Bank address 1 |
| 引脚 P1 | BA2 — Bank address 2 |
| 引脚 P2 | VDDQ — I/O power supply |
| 引脚 P3 | RAS# — Row address strobe |
| 引脚 R1 | CAS# — Column address strobe |
| 引脚 R2 | VSS — Ground |
| 引脚 R3 | WE# — Write enable |
| 引脚 T1 | CS# — Chip select |
| 引脚 T2 | VDD — Power supply |
| 引脚 T3 | CKE — Clock enable |
| 引脚 U1 | ODT — On-die termination |
| 引脚 U2 | VSS — Ground |
| 引脚 U3 | CK — Clock |
| 引脚 V1 | CK# — Complementary clock |
| 引脚 V2 | VDDQ — I/O power supply |
| 引脚 V3 | RESET# — Reset |
典型应用
W634GU6RB09J 适用于 6 应用s: Mobile Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Embedded Systems.
Mobile Computing
The W634GU6RB09J's low 1.35V operation and 4Gbit density make it ideal for laptops, tablets, and ultrabooks where power efficiency and compact size are critical. Its 1066MHz data rate supports smooth multitasking and responsive performance. The 96-VFBGA package saves PCB space, enabling thinner designs. With a 20ns CAS latency, it provides fast access to frequently used data, enhancing user experience.
推荐
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB09J provides high-bandwidth memory for packet buffering and routing tables. Its 1066MHz data rate ensures low-latency data transfer, while the 4Gbit capacity supports large forwarding databases. The low power consumption reduces heat generation in dense networking hardware. The device's on-die termination and write leveling features maintain signal integrity at high speeds, crucial for reliable network operation.
推荐
Industrial Automation
The W634GU6RB09J is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time data processing. Its wide operating temperature range (0°C to +95°C) ensures performance in harsh environments. The 4Gbit density allows for extensive data logging and complex control algorithms. The low voltage operation reduces power consumption in 24/7 operation, and the compact package fits into space-limited control modules.
推荐
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB09J offers the memory bandwidth needed for high-definition video streaming and gaming. Its 1066MHz speed supports smooth graphics rendering, while the 4Gbit capacity handles multiple applications simultaneously. The low power consumption is beneficial for energy-efficient consumer devices. The small VFBGA package enables slim product designs, and the RoHS compliance meets environmental regulations.
推荐
Automotive Infotainment
The W634GU6RB09J is used in automotive infotainment systems for navigation, audio, and video playback. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 4Gbit density supports large map databases and media files. The device's temperature range is suitable for cabin environments. The high data rate ensures responsive user interfaces, and the compact package fits into dashboard electronics.
推荐
Embedded Systems
In embedded systems like single-board computers and IoT gateways, the W634GU6RB09J provides high-capacity memory for running operating systems and applications. Its low power consumption is ideal for battery-powered devices, and the 1066MHz speed ensures responsive performance. The 96-VFBGA package is suitable for compact embedded boards. The device's self-refresh mode reduces standby power, extending battery life in portable embedded systems.
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推荐产品汇总
工程参考数据： W634GU6RB09J ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | W634GU6RB-09 | W634GU6RB12J | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Winbond | Winbond | Winbond | Micron | Samsung |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 1066 MHz | 1066 MHz | 1200 MHz | 1066 MHz | 1066 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| CAS Latency | 20 ns | 20 ns | 15 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Low voltage operation （对比 MT41K256M16HA-125)
- Higher speed grade option （对比 W634GU6RB-09)
- Compact package （对比 K4B4G1646D-BYK0)
设计说明
For reliable operation at 1066MHz, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within ±0.5mm for data lines and ±1mm for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The W634GU6RB09J operates up to +95°C case temperature. In high-ambient environments, ensure adequate airflow or a heatsink. The 96-VFBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For a 1W power dissipation, the junction temperature rise is 20°C above ambient. Monitor the case temperature to stay within limits.
Use on-die termination (ODT) settings to match the memory bus impedance. For point-to-point connections, set ODT to 40 ohms. For multi-rank configurations, adjust ODT dynamically. Implement write leveling and read leveling as per JEDEC DDR3L specifications to compensate for clock skew. Keep the clock and strobe traces length-matched to avoid setup/hold violations.
合规信息
Winbond states all Flash products are Halogen-Free and RoHS compliant. AEC-Q100 not applicable for this commercial-grade part.
