K4B4G1646E-BMK0 vs K4B4G1646E-BMMA 对比
详细并排对比 K4B4G1646E-BMK0 出自 Samsung Electronics 和 K4B4G1646E-BMMA 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BMK0 | K4B4G1646E-BMMA |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $16.08 |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| 工作温度 | -40°C to +95°C | -40°C to +95°C |
| 封装 | 96-FBGA | 96-FBGA (9x13 mm) |
| 接口 | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| 数据速率 | 1600 Mbps | 1600 Mbps |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 安装类型 | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 电源电压 | — | 1.35 V |
| Number of Banks | — | 8 |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes (Dynamic ODT) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |