K4B4G1646E-BMK0 vs K4B4G1646E-BMMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and K4B4G1646E-BMMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BMK0 | K4B4G1646E-BMMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $16.08 |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C |
| Package | 96-FBGA | 96-FBGA (9x13 mm) |
| Interface | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| Data Rate | 1600 Mbps | 1600 Mbps |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Mounting Type | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Supply Voltage | — | 1.35 V |
| Number of Banks | — | 8 |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes (Dynamic ODT) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |