K9ADGD8S0A vs K9PRGY8S7M 对比
详细并排对比 K9ADGD8S0A 出自 Samsung Electronics 和 K9PRGY8S7M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 量产中规格对比
| 参数 | K9ADGD8S0A | K9PRGY8S7M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 停产 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| 电源电压 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| 接口 | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E cycles] |
| 工作温度 | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature] |
| 封装 | [DATA_NEEDED: package] | — |
| 存储器类型 | — | NAND Flash |
| Density | — | [DATA_NEEDED: density] |
| 存储组织 | — | [DATA_NEEDED: organization] |
| 接口类型 | — | [DATA_NEEDED: interface type] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |