K9ADGD8S0A vs K9PRGY8S7M 比較
詳細な並列比較: K9ADGD8S0A メーカー: Samsung Electronics および K9PRGY8S7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 生産中仕様比較
| パラメータ | K9ADGD8S0A | K9PRGY8S7M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | EEPROM | Memory ICs |
| ライフサイクル状態 | 製造終了 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| 電源電圧 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| インターフェース | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E cycles] |
| 動作温度 | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature] |
| パッケージ | [DATA_NEEDED: package] | — |
| メモリタイプ | — | NAND Flash |
| Density | — | [DATA_NEEDED: density] |
| メモリ構成 | — | [DATA_NEEDED: organization] |
| インターフェースタイプ | — | [DATA_NEEDED: interface type] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| 実装タイプ | — | Surface Mount |
| RoHS ステータス | — | [DATA_NEEDED: RoHS status] |
| MSLレベル | — | [DATA_NEEDED: MSL level] |