MT40A512M16AD-062E vs K4A8G165WG-BCWE 对比
详细并排对比 MT40A512M16AD-062E 出自 Micron Technology 和 K4A8G165WG-BCWE 出自 Samsung Electro-Mechanics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ 量产中Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ 量产中规格对比
| 参数 | MT40A512M16AD-062E | K4A8G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electro-Mechanics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.20 | $29.53 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gbit |
| 存储组织 | 512M x 16 | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time (Row Cycle) | 19 ns | — |
| 接口 | Parallel (POD) | — |
| 封装 | 96-FBGA (7.5 mm x 13.5 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AUT:E (automotive variant) | — |
| Speed Grade | -062E | — |
| 电源电压 | [DATA_NEEDED: core supply voltage (VDD)] | 1.2 V |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Prefetch Architecture | 8n with bank groups | — |
| HS Code (USHTS) | 8542320071 | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Standard Pack Quantity | [DATA_NEEDED: reel quantity] | — |
| Memory Organization | — | 512M x 16 |
| 数据速率 | — | 3200 Mbps |
| 工作温度范围 | — | 0°C to +85°C |
| Operating Current | — | 20 mA |
| Memory Interface | — | Parallel |
| Row Cycle Time (tRC) | — | 19 ns |
| Technology | — | B-die |
| Lead-Free | — | Yes |
| 生命周期状态 | — | Active |