MT40A512M16AD-062E vs K4A8G165WG-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16AD-062E by Micron Technology and K4A8G165WG-BCWE by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ ActiveSamsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16AD-062E | K4A8G165WG-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electro-Mechanics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.20 | $29.53 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time (Row Cycle) | 19 ns | — |
| Interface | Parallel (POD) | — |
| Package | 96-FBGA (7.5 mm x 13.5 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AUT:E (automotive variant) | — |
| Speed Grade | -062E | — |
| Supply Voltage | [DATA_NEEDED: core supply voltage (VDD)] | 1.2 V |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Prefetch Architecture | 8n with bank groups | — |
| HS Code (USHTS) | 8542320071 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Standard Pack Quantity | [DATA_NEEDED: reel quantity] | — |
| Memory Organization | — | 512M x 16 |
| Data Rate | — | 3200 Mbps |
| Operating Temperature Range | — | 0°C to +85°C |
| Operating Current | — | 20 mA |
| Memory Interface | — | Parallel |
| Row Cycle Time (tRC) | — | 19 ns |
| Technology | — | B-die |
| Lead-Free | — | Yes |
| Lifecycle Status | — | Active |