MT40A512M16LY-075 vs K4A8G165WB-BCTD 对比
详细并排对比 MT40A512M16LY-075 出自 Micron Technology 和 K4A8G165WB-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16LY-075 | K4A8G165WB-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $27.89 | $37.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Speed | 1.33 GHz | — |
| 数据速率 | DDR4-2666 | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks) | — |
| Refresh Time at TC -40°C to 85°C | 64ms | — |
| Refresh Time at TC >85°C to 95°C | 32ms | — |
| Refresh Time at TC >95°C to 105°C | 16ms | — |
| 封装 | 96-FBGA (7.5x13.5 mm) | 96-ball FBGA |
| 工作温度范围 | 0°C to +95°C | — |
| 安装类型 | Surface Mount | — |
| Total Density | — | 8 Gb |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0°C to +95°C (TC) |
| CAS 延迟 | — | [DATA_NEEDED: CL value] |
| tRCD | — | [DATA_NEEDED: tRCD value] |
| tRP | — | [DATA_NEEDED: tRP value] |
| Refresh | — | Auto-refresh, self-refresh |
| On-Die Termination | — | Yes (ODT) |
| ZQ Calibration | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |