MT40A512M16LY-075 vs NT5AD512M16C4-JR 对比

详细并排对比 MT40A512M16LY-075 出自 Micron Technology 和 NT5AD512M16C4-JR 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16LY-075 MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 ✓ 量产中
Nanya Technology
NT5AD512M16C4-JR NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR ✓ 量产中

规格对比

参数 MT40A512M16LY-075 NT5AD512M16C4-JR
品牌 Micron Technology Nanya Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $27.89 $73.75
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gbit
存储组织 512M x 16 512M x16
Clock Speed 1.33 GHz —
数据速率 DDR4-2666 1.6 GHz (DDR4-3200)
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Supply 2.5V (-125mV, +250mV) —
I/O Type 1.2V pseudo open-drain —
Internal Banks (x16) 8 (2 groups of 4 banks) —
Refresh Time at TC -40°C to 85°C 64ms —
Refresh Time at TC >85°C to 95°C 32ms —
Refresh Time at TC >95°C to 105°C 16ms —
封装 96-FBGA (7.5x13.5 mm) TFBGA-96
工作温度范围 0°C to +95°C 0°C to +95°C
安装类型 Surface Mount —
Supply Voltage (VDD) — 1.2 V
Standby Current — 0.023 A (max)
Number of Terminals — 96
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Write Leveling — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS — Compliant

数据手册与资源

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