NT5AD512M16B4-HR vs MT40A512M16TB-062E 对比
详细并排对比 NT5AD512M16B4-HR 出自 Nanya Technology 和 MT40A512M16TB-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5AD512M16B4-HR | MT40A512M16TB-062E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $43.10 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 电源电压 | 1.2V | — |
| 封装 | 96-ball TFBGA | 96-FBGA (7.5x13 mm) |
| Temperature Range | 0°C to +95°C | — |
| 数据速率 | 3200 Mbps | 1600 MHz (DDR4-3200) |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| 存储容量 | — | 8 Gbit |
| Supply Voltage - VDD/VDDQ | — | 1.2V ±60mV |
| Supply Voltage - VPP | — | 2.5V, -125mV, +250mV |
| tRCD | — | 19 ns |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| 工作温度范围 | — | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| 安装类型 | — | Surface Mount |
| 接口 | — | Parallel |
| 特性 | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS 状态 | — | Compliant |
| REACH Status | — | Compliant |