NT5AD512M16B4-HR vs MT40A512M16TB-062E Comparison
Detailed side-by-side comparison of NT5AD512M16B4-HR by Nanya Technology and MT40A512M16TB-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16B4-HR | MT40A512M16TB-062E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | — |
| Package | 96-ball TFBGA | 96-FBGA (7.5x13 mm) |
| Temperature Range | 0°C to +95°C | — |
| Data Rate | 3200 Mbps | 1600 MHz (DDR4-3200) |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gbit |
| Supply Voltage - VDD/VDDQ | — | 1.2V ±60mV |
| Supply Voltage - VPP | — | 2.5V, -125mV, +250mV |
| tRCD | — | 19 ns |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Operating Temperature Range | — | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| Mounting Type | — | Surface Mount |
| Interface | — | Parallel |
| Features | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS Status | — | Compliant |
| REACH Status | — | Compliant |