NT5AD512M16B4-HR vs MT40A512M16TB-062E Comparison
Detailed side-by-side comparison of NT5AD512M16B4-HR by Nanya Technology and MT40A512M16TB-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16B4-HR
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR β ActiveMicron Technology
MT40A512M16TB-062E
MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16TB-062E β ActiveSpecification Comparison
| Parameter | NT5AD512M16B4-HR | MT40A512M16TB-062E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $43.10 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | β |
| Package | 96-ball TFBGA | 96-FBGA (7.5x13 mm) |
| Temperature Range | 0Β°C to +95Β°C | β |
| Data Rate | 3200 Mbps | 1600 MHz (DDR4-3200) |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | β |
| Memory Size | β | 8 Gbit |
| Supply Voltage - VDD/VDDQ | β | 1.2V Β±60mV |
| Supply Voltage - VPP | β | 2.5V, -125mV, +250mV |
| tRCD | β | 19 ns |
| Refresh Time | β | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C |
| Operating Temperature Range | β | 0Β°C to +95Β°C (standard), -40Β°C to +95Β°C (IT) |
| Mounting Type | β | Surface Mount |
| Interface | β | Parallel |
| Features | β | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS Status | β | Compliant |
| REACH Status | β | Compliant |