NT5CC256M16CN-FLI vs K4B4G1646E-BYMA 对比
详细并排对比 NT5CC256M16CN-FLI 出自 Nanya Technology 和 K4B4G1646E-BYMA 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16CN-FLI | K4B4G1646E-BYMA |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.20 | $14.32 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb (256M x 16) | 4 Gb |
| 电源电压 | 1.35V (DDR3L) | 1.35 V (1.28 V to 1.575 V) |
| 数据速率 | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| I/O Width | 16 bits | — |
| Internal Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| CAS 延迟 | Programmable (11, 12, 13) | [DATA_NEEDED: CAS Latency] |
| 封装 | TFBGA-96 | FBGA-96 |
| 工作温度范围 | 0°C to +95°C (case) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Supported | — |
| Auto Precharge | Supported | — |
| On-Die Termination (ODT) | Supported | — |
| Write Leveling | Supported | — |
| ZQ Calibration | Supported | — |
| 存储组织 | — | 256M x 16 |
| Clock Frequency | — | 933 MHz |
| 工作温度 | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| 安装类型 | — | Surface Mount |
| RoHS | — | Compliant |
| 引脚数 | — | 96 |