NT5CC256M16CN-FLI vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CC256M16CN-FLI by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CC256M16CN-FLI | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb (256M x 16) | 4 Gb |
| Supply Voltage | 1.35V (DDR3L) | 1.35 V (1.28 V to 1.575 V) |
| Data Rate | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| I/O Width | 16 bits | — |
| Internal Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| CAS Latency | Programmable (11, 12, 13) | [DATA_NEEDED: CAS Latency] |
| Package | TFBGA-96 | FBGA-96 |
| Operating Temperature Range | 0°C to +95°C (case) | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Supported | — |
| Auto Precharge | Supported | — |
| On-Die Termination (ODT) | Supported | — |
| Write Leveling | Supported | — |
| ZQ Calibration | Supported | — |
| Organization | — | 256M x 16 |
| Clock Frequency | — | 933 MHz |
| Operating Temperature | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Mounting Type | — | Surface Mount |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |