IDD06SG60CXTMA2 - 600V 6A CoolSiC G3 SiC Schottky Diode | Infineon
MPN: IDD06SG60CXTMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.62 | $26.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.86 | $930.00 |
| 1,000 | $1.54 | $1,540.00 |
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IDD06SG60CXTMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) |
| Diode Configuration | Single |
| Technology | Silicon Carbide (SiC) Schottky |
| Reverse Voltage (VRRM) | 600 V |
| Continuous Forward Current (IF) | 6 A |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) |
| Reverse Current (IR) Max | 500 nA |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package / Case | PG-TO252-3 (DPAK) |
| Mounting Style | Surface Mount (SMD/SMT) |
| Packaging | Cut Tape (Tape & Reel per factory standard) |
| RoHS Status | Compliant |
IDD06SG60CXTMA2 Pin Configuration
| Pin 1 | Cathode (K) / Tab — Cathode connection; internally bonded to the metal tab. Mounting tab is the primary thermal path. |
| Pin 2 | Cathode (K) — Cathode connection, signal pin (electrically common with tab). |
| Pin 3 | Anode (A) — Anode connection; current flows from this pin to the cathode/tab in forward bias. |
Forward Current vs Forward Voltage (IF vs VF) - DC Steady-State
Typical Applications
IDD06SG60CXTMA2 is suitable for 6 applications: Continuous-Conduction-Mode (CCM) PFC Rectifier, Totem-Pole Bridgeless PFC Slow Leg, Solar String Inverter Boost/Output Stage, EV On-Board Charger (OBC) PFC/Output Rectifier, Industrial Motor Drive Brake/Clamp Diode, Telecom / Server SMPS Output Rectifier.
Continuous-Conduction-Mode (CCM) PFC Rectifier
The IDD06SG60CXTMA2 is the canonical rectifier choice for the boost-diode position of a hard-switched CCM power-factor-correction stage in 1-3 kW SMPS. Its zero reverse-recovery charge (Qr) eliminates the shoot-through current that occurs when a silicon PiN boost diode turns off while the MOSFET is already switching on - directly lowering PFC-stage switching loss by 30-50% versus the MUR460-class equivalent. With VRRM = 600 V and IF = 6 A continuous, it covers universal-input (85-265 VAC) front ends with the typical 390 VDC bus. At 100 kHz CCM operation, the SiC G3 device's lower capacitive charge (Qc) further reduces dv/dt-induced EMI, often eliminating a stage of common-mode filtering. Use a 10 Ω / 10 nF RC snubber to limit voltage overshoot below the 600 V rating under abnormal load steps.
Recommended
Totem-Pole Bridgeless PFC Slow Leg
In a totem-pole bridgeless PFC, the IDD06SG60CXTMA2 is the preferred device for the slow-frequency leg rectifier that conducts during the AC line half-cycle. The SiC Schottky eliminates the second-order reverse-recovery losses that make silicon ultrafast diodes impractical in this topology at switching frequencies above 50 kHz. At 6 A continuous, it matches the typical 1.5-3 kW server/telecom PSU power level. The 175 °C junction rating allows sealed-housing operation where ambient inside the chassis reaches 90 °C, with the DPAK's exposed tab providing a low thermal-resistance path to a 1 oz copper pour. Pair with a 600 V GaN HEMFET (e.g., GS66508B) on the high-frequency leg for maximum efficiency, and add TVS clamping to protect the SiC diode from line-side transients.
Recommended
Solar String Inverter Boost/Output Stage
The IDD06SG60CXTMA2 is deployed as the output rectifier and reverse-polarity blocking diode in residential 1.5-3 kW string inverters connecting a 400-500 VDC PV bus to the grid-tie stage. Its 600 V rating provides > 30% safety margin on a 400 VDC maximum-power-point bus, and the zero-Qr behavior preserves the efficiency of the upstream interleaved boost converter even at 50 kHz+ switching. Reverse current of 500 nA maximum is two orders of magnitude better than silicon equivalents, reducing night-time parasitic loss across the PV array. The DPAK SMD package supports fully automated assembly and IR-reflow soldering, which is critical for high-volume solar manufacturing. Use thermal vias under the tab to a 2 oz inner-layer copper pour to keep Tj rise below 50 °C at full 6 A load.
Recommended
EV On-Board Charger (OBC) PFC/Output Rectifier
The IDD06SG60CXTMA2 is suitable for the 6.6-11 kW on-board charger (OBC) PFC boost and isolation-stage output rectifier positions. Its 175 °C junction rating tolerates the under-hood thermal environment where ambient can exceed 105 °C, and the zero reverse-recovery behavior enables 200 kHz+ switching in the LLC and PFC stages that silicon-diode OBC designs cannot reach. At 6 A average forward current, it aligns with the typical OBC secondary-side current at the lower power tier. The DPAK package simplifies the secondary-side PCB layout where SMD is preferred. Combine with automotive-grade AEC-Q101 qualified MOSFETs (e.g., IPB60R099P7) for a fully automotive-qualified power train; note that IDD06SG60CXTMA2 itself is industrial-grade and would require an AEC-Q101 sister part for OEM automotive deployment.
Recommended
Industrial Motor Drive Brake/Clamp Diode
In 400 V industrial variable-frequency drives (VFDs), the IDD06SG60CXTMA2 is used as the brake-chopper diode across the DC bus to dissipate regenerative energy into the braking resistor. Its 600 V rating covers the 700 V transient peaks of a 480 VAC rectified bus with adequate derating, and the 32 A IFSM handles the repetitive braking surges without thermal fatigue. Compared to silicon PiN diodes of the same current class, the SiC Schottky removes the reverse-recovery oscillations that couple into the IGBT gate-drive loop, reducing the need for additional gate-snubber components. The -55 °C minimum operating temperature supports outdoor-rated drives and cold-storage applications. Mount on an insulated thermal pad if the tab's cathode potential cannot share the chassis ground.
Recommended
Telecom / Server SMPS Output Rectifier
The IDD06SG60CXTMA2 is used as the secondary-side rectifier in 48 V telecom and 12 V server SMPS converters, particularly in the 1-2 kW tier where silicon Schottky diodes' higher Qr becomes a switching-loss bottleneck above 200 kHz. Its zero reverse-recovery behavior enables hardswitched full-bridge or LLC topologies to operate efficiently at 300-500 kHz, shrinking the magnetic components and improving power density. The 6 A continuous rating matches a typical 600 W output at 100 V secondary. The DPAK's small footprint is assembly-friendly for high-volume server PSU production. Use synchronous rectification (with 100 V MOSFETs) instead if the output voltage is below ~30 V, where the 2.1 V VF would otherwise dominate conduction loss.
Recommended
Recommended Products Summary
Engineering reference data for IDD06SG60CXTMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDH06SG60C | IDD09SG60C | STPSC6H065D | DSR6U600D1-13 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same family) | Infineon (same family) | STMicroelectronics | Diodes Incorporated |
| Package | PG-TO252-3 (DPAK) | PG-TO220-3 (TO-220AB) - through-hole | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Reverse Voltage (VRRM) | 600 V | 600 V | 600 V | 650 V | 600 V |
| Continuous Forward Current (IF) | 6 A | 6 A | 9 A | 6 A | 6 A |
| Forward Voltage (VF) at rated IF | 2.10 V @ 6 A | 2.10 V @ 6 A | [DATA_NEEDED] | 1.70 V @ 6 A | [DATA_NEEDED] |
| Non-Repetitive Surge Current (IFSM) | 32 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Max Reverse Current (IR) | 500 nA | 500 nA | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -40 °C to +175 °C | -55 °C to +175 °C |
| Technology Family | CoolSiC™ thinQ™ G3 SiC Schottky | CoolSiC G3 SiC Schottky | CoolSiC G3 SiC Schottky | ST SiC Schottky (Gen-2) | Diodes Inc. SiC Schottky |
Key Differentiators
- Industry-lowest capacitance per amp rating (G3 generation) (vs STPSC6H065D (ST Gen-2))
- High-volume industrial availability in DPAK SMD (vs IDH06SG60C (TO-220 through-hole))
- 175 °C maximum junction temperature (industrial leading class) (vs DSR6U600D1-13 (Diodes Incorporated SiC))
Design Notes
Estimated: At IF=6 A continuous with VF=2.1 V, conduction dissipation is 12.6 W. The PG-TO252-3 (DPAK) has a typical θJA of ~50 °C/W on a 1 oz 1-square-inch copper pad at JEDEC EIA/JESD51 standard test conditions, giving a junction rise of ~63 °C above ambient. For reliable operation at 6 A continuous in a 70 °C ambient, drop the average forward current to ~4 A or expand the copper pad to 2 square inches (θJA drops to ~35 °C/W). Add thermal vias (6-8 × 0.3 mm) under the tab to an inner 2 oz copper plane for additional θJA reduction.
Keep the SiC diode's switching-node loop (anode lead → die → cathode tab) area as small as practical. The fast dv/dt (> 50 V/ns typical for SiC G3) couples strongly into the gate loop of the controlling MOSFET; route the gate-driver return trace to the MOSFET source (Kelvin connection), NOT to the diode's tab ground. Place the diode's input/output decoupling capacitors within 3 mm of its pins. Use a 100 V/µm-creepage guard ring around the cathode tab if the anode is switching above 400 V on a single-layer PCB.
Critical pitfalls: (1) The DPAK tab is internally common with the cathode - never assume it is a separate thermal-only pad like an IGBT. (2) Do not parallel IDD06SG60CXTMA2 devices without per-diode series inductors (10-100 nH) - the G3's low thermal coefficient of VF does NOT balance current sharing as well as a silicon PiN. (3) Avoid using the IDD06SG60CXTMA2 below ~50 kHz switching in CCM PFC, where silicon ultrafast diodes remain more cost-effective. (4) Verify reverse blocking voltage margin: 600 V VRRM only derates linearly to 500 V at 175 °C Tj.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon CoolSiC family declaration. Industrial-grade; not AEC-Q100/Q101 qualified - for automotive deployment, use the AEC-Q101 sister part IDD06SG60CAQ (if available) or request automotive-grade status from Infineon sales.
