IS61C6416AL-12TLI - 1Mb 64Kx16 12ns Async SRAM | ISSI
料号： IS61C6416AL-12TLI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.8 | $2.80 |
| 10 | $2.65 | $26.50 |
| 100 | $2.4 | $240.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.85 | $1,850.00 |
IS61C6416AL-12TLI 概述
What is an asynchronous SRAM? An asynchronous SRAM (Static Random-Access Memory) is a volatile memory device whose read and write cycles are triggered directly by address and control-line transitions, with no external clock required. It sits in the computer-memory hierarchy above DRAM in speed and below on-chip cache in density, and is commonly chosen when deterministic, low-latency random access (single-digit to a few tens of nanoseconds) matters more than density or cost-per-bit. Within ISSI's portfolio it belongs to the IS61C6416AL family of 64Kx16 high-speed CMOS SRAMs.
Key features of the IS61C6416AL-12TLI include 12 ns typical access time, low-power CMOS operation with CMOS- and TTL-compatible I/O, automatic power-down when deselected, and separate upper-byte (UB) and lower-byte (LB) enables for byte-wide writes. The 44-pin TSOP-II footprint is JEDEC-standard, simplifying PCB layout and second-sourcing. The industrial temperature grade (-40C to +85C) supports harsh-environment deployment.
The device is fabricated using ISSI's high-performance CMOS process, yielding an access time of 12 ns while keeping active and standby currents low. Data is retained as long as power is applied, with no refresh cycles. The active-low write enable (WE#) and chip-enable (CE#) signals give the designer full read/write control, and the byte-control pins (UB#, LB#) allow efficient use of the 16-bit data bus in mixed-width systems.
Typical applications include networking line cards, industrial control and instrumentation, automotive infotainment subsystems, telecom routers and switches, RAID controllers, set-top boxes, and any 16-bit or 32-bit embedded CPU system that needs a fast external memory for buffers, FIFOs, or lookup tables. The TSOP-II package and standard JEDEC pinout also make it a popular choice for legacy designs that must be maintained or refreshed.
When designing with this part, observe the standard SRAM power-supply decoupling practice: place a 0.1 uF ceramic bypass capacitor as close as possible to the VCC and VSS pins. Unused inputs (UB#, LB#, WE#) should be tied to VCC through a pull-up to prevent unwanted writes. Designers should also note that the asynchronous interface means there is no clock-domain crossing required when interfacing to legacy microcontrollers or DSPs that lack an external memory controller with SRAM timing support.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes that are not gathered in the manufacturer datasheet alone, giving engineers a single source for sourcing, replacement, and PCB-layout decisions.
直接替换替代料： IS61C6416AL-12TLI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
IS61C6416AL-12TLI-TR
✅ 直接替换📋 参考替代料（不在目录中）
IS62C6416AL-12TLI
✅ 直接替换📋 参考替代料（不在目录中）
71016S12PHG
✅ 直接替换📋 参考替代料（不在目录中）
IS61C6416AL-12TLI 最大额定值与电气特性
| 存储器类型 | Asynchronous SRAM (volatile, static) |
| 存储容量 | 1 Mbit (64K x 16) |
| 存储组织 | 65,536 words x 16 bits |
| Access Time | 12 ns |
| Supply Voltage (VCC) | 4.5 V to 5.5 V |
| 接口类型 | Parallel (16-bit data bus) |
| 工作温度 | -40 C to +85 C (Industrial) |
| 封装 | 44-pin TSOP Type II |
| 安装类型 | Surface Mount |
| Byte Control | UB# and LB# (upper/lower byte enable) |
| Write Enable | Active-low WE# |
| Chip Enable | Active-low CE# (power-down control) |
| Output Enable | Active-low OE# |
| I/O Compatibility | CMOS and TTL compatible |
| RoHS 状态 | Compliant |
IS61C6416AL-12TLI 引脚配置
| 引脚 1 | NC — Not connected |
| 引脚 2 | A15 — Address input A15 (MSB) |
| 引脚 3 | A14 — Address input A14 |
| 引脚 4 | A13 — Address input A13 |
| 引脚 5 | A12 — Address input A12 |
| 引脚 6 | A11 — Address input A11 |
| 引脚 7 | A10 — Address input A10 |
| 引脚 8 | A9 — Address input A9 |
| 引脚 9 | A8 — Address input A8 |
| 引脚 10 | NC — Not connected |
| 引脚 11 | OE# — Output enable (active low) |
| 引脚 12 | UB# — Upper byte enable (active low) |
| 引脚 13 | LB# — Lower byte enable (active low) |
| 引脚 14 | NC — Not connected |
| 引脚 15 | I/O0 — Data I/O bit 0 (LSB) |
| 引脚 16 | I/O1 — Data I/O bit 1 |
| 引脚 17 | I/O2 — Data I/O bit 2 |
| 引脚 18 | I/O3 — Data I/O bit 3 |
| 引脚 19 | VCC — Power supply (+5 V) |
| 引脚 20 | I/O4 — Data I/O bit 4 |
| 引脚 21 | VSS — Ground |
| 引脚 22 | I/O5 — Data I/O bit 5 |
| 引脚 23 | I/O6 — Data I/O bit 6 |
| 引脚 24 | I/O7 — Data I/O bit 7 |
| 引脚 25 | I/O8 — Data I/O bit 8 |
| 引脚 26 | I/O9 — Data I/O bit 9 |
| 引脚 27 | I/O10 — Data I/O bit 10 |
| 引脚 28 | I/O11 — Data I/O bit 11 |
| 引脚 29 | VSS — Ground |
| 引脚 30 | I/O12 — Data I/O bit 12 |
| 引脚 31 | VCC — Power supply (+5 V) |
| 引脚 32 | I/O13 — Data I/O bit 13 |
| 引脚 33 | I/O14 — Data I/O bit 14 |
| 引脚 34 | I/O15 — Data I/O bit 15 (MSB) |
| 引脚 35 | NC — Not connected |
| 引脚 36 | WE# — Write enable (active low) |
| 引脚 37 | NC — Not connected |
| 引脚 38 | CE2 — Chip enable 2 (active high) |
| 引脚 39 | CE# — Chip enable 1 (active low, primary) |
| 引脚 40 | A0 — Address input A0 (LSB) |
| 引脚 41 | A1 — Address input A1 |
| 引脚 42 | A2 — Address input A2 |
| 引脚 43 | A3 — Address input A3 |
| 引脚 44 | A4 — Address input A4 |
典型应用
IS61C6416AL-12TLI 适用于 6 应用s: Networking Line Card Buffers, Industrial Control & Instrumentation, Automotive Infotainment Subsystems, RAID Controller Cache Memory, Set-Top Box and Embedded Consumer Electronics, Embedded CPU External Memory Buffers.
Networking Line Card Buffers
The IS61C6416AL-12TLI fits networking line cards as a fast 16-bit packet buffer or lookup table. Its 12 ns access time keeps pace with 33 MHz and 50 MHz external bus designs used in legacy routers and switches. Unlike SDRAM, the asynchronous interface requires no refresh controller, simplifying the FPGA or ASIC glue logic. The 5 V VCC is compatible with classic network processor ASICs such as the Intel IXP1200-era designs.
推荐
Industrial Control & Instrumentation
In PLCs, motor drives, and test instruments, the IS61C6416AL-12TLI provides deterministic 12 ns read/write access for waveform capture buffers and data tables. The -40C to +85C industrial temperature range supports cabinet and factory-floor environments without derating. Its TSOP-II surface-mount package simplifies assembly on multilayer control boards and reflows cleanly with standard SAC305 profiles.
推荐
Automotive Infotainment Subsystems
The IS61C6416AL-12TLI serves automotive infotainment head units and CD/DVD changers as audio buffer memory. Its 16-bit data width matches audio sample pipelines without byte-stitching, and the 12 ns access time keeps up with 48 kHz and 96 kHz audio streams. Designers should note this part is industrial-grade (-40C to +85C), not AEC-Q100 qualified; for safety-critical or under-hood applications a different ISSI automotive part is preferred.
推荐
RAID Controller Cache Memory
RAID controllers use the IS61C6416AL-12TLI as write-back cache memory between the host bus and the disk array. The 1 Mbit density holds sector metadata and pending-write tags for a moderate number of concurrent operations, while the 12 ns access time keeps DMA transfers fed without bus stalls. The 5 V single-supply operation simplifies power design in hot-swap controller cards that already have a 5 V rail.
推荐
Set-Top Box and Embedded Consumer Electronics
Set-top boxes, point-of-sale terminals, and older game consoles use the IS61C6416AL-12TLI as frame buffer or scratchpad memory for the MIPS/ARM host processor. The TSOP-II package occupies minimal board area and reflows cleanly, and the asynchronous SRAM interface connects directly to legacy microprocessors without an SDRAM controller. The 16-bit bus matches 16-bit external memory buses common in this segment.
推荐
Embedded CPU External Memory Buffers
Embedded CPU systems based on legacy 16-bit and 32-bit microcontrollers (such as 80186, 68SEC000, or older ARM7) use the IS61C6416AL-12TLI as an external memory buffer for boot code, data tables, or runtime scratchpad. The 12 ns access time is fast enough for zero-wait-state operation at moderate bus frequencies. The byte-enable pins (UB#, LB#) allow 8-bit and 16-bit mixed accesses without external logic.
推荐
推荐产品汇总
工程参考数据： IS61C6416AL-12TLI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IS61C6416AL-12TLI-TR | IS62C6416AL-12TLI | 71016S12PHG |
|---|---|---|---|---|
| Package | 44-pin TSOP II | 44-pin TSOP II - same | 44-pin TSOP II - same | 44-pin TSOP II - same |
| Brand | ISSI | ISSI | ISSI | Renesas (formerly IDT) |
| Memory Size | 1 Mbit (64K x 16) | 1 Mbit (64K x 16) | 1 Mbit (64K x 16) | 1 Mbit (64K x 16) |
| Access Time | 12 ns | 12 ns | 12 ns | 12 ns |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Operating Temperature | -40 C to +85 C (Industrial) | -40 C to +85 C | 0 C to +70 C (Commercial) | 0 C to +70 C (Commercial) |
| Interface Type | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel |
| Byte Control | UB# / LB# | UB# / LB# | UB# / LB# | UB# / LB# |
关键差异点
- Industrial temperature grade at commercial price point （对比 IS62C6416AL-12TLI)
- Wider cross-brand second-source availability （对比 IS61C6416AL-12TLI-TR)
- Byte-write capability via UB#/LB# without external logic （对比 71016S12PHG)
设计说明
Place a 0.1 uF ceramic decoupling capacitor as close as possible to each VCC/VSS pin pair (pin 19/21 and pin 31/29 on the 44-pin TSOP-II). A bulk 10 uF tantalum or aluminum polymer capacitor on the 5 V rail near the SRAM further reduces supply ripple. According to ISSI design guidance, the active current of the IS61C6416AL family scales with read/write frequency, so proper decoupling keeps VCC ripple below 50 mVpk for reliable 12 ns access.
Tie all unused control inputs (OE#, WE#, UB#, LB#, CE#) to a defined logic level through a 10 kohm pull-up to VCC to prevent bus contention or accidental writes. According to the ISSI IS61C6416AL datasheet, floating control pins can cause unwanted write cycles or excessive ICC standby current. Never leave UB# or LB# floating if you intend to use the full 16-bit data bus.
Route the 16-bit data bus (I/O0 through I/O15) and the lower address bits (A0 through A7) with matched trace lengths to within 1 cm to minimize skew between byte lanes. Keep the address and data traces away from switching power converter nodes by at least 5 mm to avoid coupling noise into the SRAM sense amplifiers. According to ISSI TSOP-II land pattern recommendations, use a 4-layer PCB with a continuous ground plane under the package for best 12 ns access-time margin.
At 12 ns access time, output drive strength is sufficient for moderate capacitive loads (up to 50 pF per pin), but heavily loaded buses should be split with bus buffers. Series damping resistors of 22 to 33 ohm near the SRAM outputs reduce ringing on long backplane traces. According to ISSI datasheet AC characteristics, the part meets timing into a 50 pF load with TTL-compatible thresholds.
合规信息
RoHS compliant per ISSI product page and Mouser listing. Industrial temperature grade (-40C to +85C) but not AEC-Q100 qualified; for AEC-Q100 automotive applications, contact ISSI for the automotive-grade IS61C6416AL variant.
