K4RBH046VM-BCCP - 32Gb DDR5 6400Mbps DRAM | Samsung
MPN: K4RBH046VM-BCCP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.8 | $118.00 |
| 100 | $10.95 | $1,095.00 |
| 500 | $10.2 | $5,100.00 |
| 1,000 | $9.6 | $9,600.00 |
Drop-in alternatives for K4RBH046VM-BCCP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RCH046VM-2CLP
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$10.1 / Unit
View Datasheet →K4RCH046VM-2CCM
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Contact for price
View Datasheet →K4RBH046VM-BCLP
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
K4RBH046VM-BCCP Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Memory Size | 32 Gb |
| Memory Organization | 2G x 4 |
| Data Rate | 6400 Mbps |
| Supply Voltage | 1.1 V |
| Interface | Parallel |
| Package | 78-FBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | 0 C to +85 C |
| Memory Format | DRAM |
| Technology | DDR5 |
| Packaging | Tray |
| Product Status | Sample / Active |
K4RBH046VM-BCCP 78-fbga Pin Configuration Guide
Complete pinout information for K4RBH046VM-BCCP (78-fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RBH046VM-BCCP.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RBH046VM-BCCP is suitable for 6 applications: Data Center Server RDIMM Memory, High-Performance Computing (HPC) Memory Subsystems, Networking and Telecommunications Equipment, Industrial Controllers and Edge Computing, DDR5 Memory Module Manufacturing, Replacement Sourcing and BOM Continuity.
Data Center Server RDIMM Memory
The K4RBH046VM-BCCP's 32 Gb density and 2G x 4 organization make it a primary component for registered DIMMs in data center servers, where x4 organization allows memory controllers to use in-line ECC across multiple DRAM devices for single-device data correction. At 6400 Mbps per pin, a channel populated with these devices delivers substantially higher bandwidth than DDR4-3200 equivalents, directly improving virtualization density and in-memory database throughput. The 1.1 V core supply reduces per-transfer energy versus DDR4's 1.2 V, lowering total server memory power draw at scale. Placed on a fly-by-routed RDIMM, the DRAM's DDR5 on-die ECC and CA bus parity features add reliability without host-side overhead, making it well suited to 24/7 cloud workloads.
Recommended
High-Performance Computing (HPC) Memory Subsystems
HPC clusters depend on memory bandwidth to feed GPU and CPU accelerators, and the K4RBH046VM-BCCP's DDR5-6400 speed grade provides the per-pin throughput required for bandwidth-sensitive codes such as CFD and molecular dynamics. The 32 Gb die allows deeper-capacity modules (256 GB+ RDIMMs) without increasing device count, improving module yield and lowering cost per gigabyte. In these systems the DRAM operates at 1.1 V with 0 C to +85 C ambient, compatible with liquid- and air-cooled compute node environments. Samsung's long-term availability commitments for this DDR5 generation, noted by distributor SMC, reduce obsolescence risk across multi-year cluster deployment and service lifecycles.
Recommended
Networking and Telecommunications Equipment
Routers, switches, and 5G baseband units buffer packet streams in DRAM, and the K4RBH046VM-BCCP offers the density (32 Gb) and deterministic DDR5 latency structure needed for deep packet buffers under load. The x4 organization suits fault-tolerant memory pools with ECC, an operational requirement for carrier-grade equipment targeting high uptime. At 6400 Mbps, line-card processors can sustain 100 GbE and higher forwarding rates without memory bottlenecks. The commercial 0 C to +85 C temperature range fits well-ventilated telecom racks. DDR5's on-die ECC and command/address parity improve data integrity for forwarding tables and flow state, reducing soft-error-driven resets in always-on network infrastructure deployments.
Recommended
Industrial Controllers and Edge Computing
Industrial controllers, machine-vision systems, and edge AI gateways increasingly adopt DDR5 for its bandwidth-per-watt advantage. The K4RBH046VM-BCCP's 1.1 V operation lowers thermal load in sealed industrial enclosures where active cooling is limited, while the 32 Gb density supports frame buffering and local model inference on edge nodes. Distributor descriptions highlight deployment in industrial systems requiring long-term availability, a key concern for factory equipment with 10+ year service lives. Designers should derate the 0 C to +85 C operating window against enclosure ambient, adding heatspreading via the FBGA's thermal balls to the PCB ground plane to keep junction temperature within specification under continuous buffering workloads.
Recommended
DDR5 Memory Module Manufacturing
Module houses building UDIMMs, RDIMMs, and LRDIMMs use the K4RBH046VM-BCCP as a core commodity die: its 2G x 4 organization allows 8-deep or 16-deep populations for 64 GB to 128 GB class modules with full ECC coverage. The 6400 Mbps bin supports mainstream DDR5-5600/6400 module SKUs for workstation and entry-server markets. Tray packaging suits automated pick-and-place at surface-mount lines, and the 78-ball FBGA footprint is compatible with standard DDR5 module assembly and rework processes. Sampling product status means module makers should secure allocation agreements with Samsung or authorized distributors before committing module roadmaps to this specific speed bin.
Recommended
Replacement Sourcing and BOM Continuity
For buyers managing discontinued or allocated DDR5 bill-of-material lines, the K4RBH046VM-BCCP serves as an active Samsung DDR5 sourcing point with documented distributor stock (33,460 pcs at Octopart Canada as of Aug 31, 2026). Its defined speed bin (BCCP, 6400 Mbps) and fixed organization (2G x 4) simplify equivalence screening against legacy DDR5 line items. Buyers should verify the exact suffix against their approved vendor list, request date codes and COC (certificate of conformance) to avoid remarked parts, and validate that firmware memory-training tables support the BCCP speed bin. Long-term availability commitments from Samsung for this DDR5 generation reduce the frequency of requalification cycles.
Recommended
Recommended Products Summary
Engineering reference data for K4RBH046VM-BCCP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RCH046VM-2CLP | K4RCH046VM-2CCM | K4RBH046VM-BCLP | K4RAH086VB-BCQK |
|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA family - verify ball-map against datasheet | 78-FBGA family - verify ball-map against datasheet | 78-FBGA family - same datasheet family | 78-FBGA family - different organization (x8) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gb | 32 Gb | 32 Gb | 32 Gb | 16 Gb |
| Organization | 2G x 4 | 2G x 4 | 2G x 4 | 2G x 4 | 2G x 8 |
| Data Rate | 6400 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0 C to +85 C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Product Status | Sample / Active | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | Sampling |
Key Differentiators
- Highest per-die density in comparison set (vs K4RAH086VB-BCQK)
- x4 organization for in-line ECC server channels (vs K4RAH086VB-BCQK)
- Same-die speed-bin flexibility within K4RBH family (vs K4RBH046VM-BCLP)
Design Notes
The K4RBH046VM-BCCP runs from a 1.1 V core supply (DDR5 JEDEC standard). DDR5 devices also require separate VDDQ (DQ bus) rails and, on modules, a 12 V PMIC-based power architecture per the DDR5 specification. Design a low-impedance power distribution network with bulk capacitance near each DRAM and high-frequency ceramic decoupling at every power ball; power integrity at 6400 Mbps is the primary limit on achievable speed margin. Verify rail sequencing per the Samsung datasheet before power-rail bring-up.
At 6400 Mbps per pin, DDR5 signal integrity requires careful fly-by routing of the CA bus, length-matched DQ/DQS groups, and on-die termination (ODT) settings tuned per Samsung's guidelines. Reference planes must be continuous under all high-speed traces; avoid stubs on DQ nets. Memory-controller training algorithms (write leveling, read training, DFE) should be run at the target speed grade and margin-tested across temperature (0 C to +85 C) and voltage corners before release.
This part is listed with product status sampling at Samsung in some distributor sources, so confirm volume availability and revision before mass production. Do not confuse speed-bin suffixes: BCCP (6400 Mbps) is not interchangeable with lower bins (BCLP) in systems locked to a specific training table. Validate that your memory controller's qualified-vendor and firmware support lists include this exact suffix, and obtain date codes and certificates of conformance to guard against remarked components in the open market.
Compliance Information
Compliance data not present in verified web data. Samsung DDR5 components are generally RoHS-compliant; confirm via official Samsung Semiconductor product page or distributor compliance certificate.
