K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung
料号： K4RHE165VB-BCWM ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.8 | $118.00 |
| 100 | $10.9 | $1,090.00 |
| 500 | $10.2 | $5,100.00 |
| 1,000 | $9.6 | $9,600.00 |
K4RHE165VB-BCWM 概述
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined DDR DRAM. In the memory hierarchy, it sits within the broader family: DDR5 SDRAM -> DRAM -> volatile semiconductor memory -> memory IC. Compared with DDR4, DDR5 delivers roughly 30% better power efficiency, moves the power management onto the module via a PMIC, and splits each DIMM into two independent 32-bit (or 40-bit with ECC) subchannels to improve concurrency and effective bandwidth.
Key features of this part include its 24 Gb density per die - among the largest monolithic DDR5 densities in volume production - a 16-bit wide data interface organized as 1G x 16, and a 5600 Mbps/pin data rate. The 1.1V core supply lowers dynamic power versus DDR4's 1.2V, while on-die termination, on-die ECC (as defined for DDR5), and bank-group architecture sustain signal integrity at speed.
Technically, the die uses Samsung's advanced DRAM process with a fine-pitched array to achieve 24Gb in the 106-ball FBGA footprint shared with lower-density DDR5 dies. The x16 organization suits applications needing moderate width per device, and the BCWM speed/temperature grade supports commercial 0 to 85 C operation.
Typical applications include next-generation DDR5 UDIMM, SODIMM and RDIMM modules, client and server platforms, gaming and workstation PCs, and AI/HPC memory subsystems where per-die density maximizes capacity per module.
When designing with this component, respect DDR5 routing rules: fly-by command/address topology, matched-length data strobes, and the requirement for the module's on-board PMIC (5V auxiliary input, 1.1V VDD rails).
This page synthesizes distributor stock, drop-in alternatives, and design notes not found in the manufacturer datasheet.
直接替换替代料： K4RHE165VB-BCWM ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4RHE165VB-BCWM （相同外形与封装尺寸） ——差异在于 Package, Organization, Interface, Memory Type, Data Rate.
快速对比工具——选择替代料号进行并排对比：
K4RHE086VB-BCWM
✅ 直接替换✓ 有现货
$7.65 / 个
查看数据手册 →K4RHE086VP
✅ 直接替换✓ 有现货
$9.9 / 个
查看数据手册 →K4RAH165VB-BCWM
✅ 直接替换✓ 有现货
$9.92 / 个
查看数据手册 →K4RAH165VB-BCQK
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K4RAH165VP-BCWM
✅ 直接替换✓ 有现货
$24.6094 / 个
查看数据手册 →K4RHE165VB-BCWM 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Density | 24 Gb |
| 存储组织 | 1G x 16 |
| 数据速率 | 5600 Mbps |
| 电源电压 | 1.1 V |
| 封装 | 106 FBGA |
| 工作温度 | 0 C to +85 C |
| Product Status | Mass Production |
| 安装类型 | Surface Mount |
| 接口 | Parallel, DDR5 |
| Generation | DDR5 |
| Application Segment | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | BCWM |
K4RHE165VB-BCWM 106 fbga 引脚配置指南
K4RHE165VB-BCWM（106 fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4RHE165VB-BCWM.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4RHE165VB-BCWM 适用于 6 应用s: DDR5 UDIMM and SODIMM Memory Modules, High-Performance Computing (HPC) Memory Subsystems, Client and Gaming Desktop Platforms, AI Accelerator and Machine Learning Memory, Networking and Edge Server Appliances, Embedded and Industrial Compute Modules.
DDR5 UDIMM and SODIMM Memory Modules
The K4RHE165VB-BCWM is a primary building block for next-generation DDR5 unbuffered and small-outline DIMMs. Its 24Gb per die organized as 1G x 16 allows a single-rank module to reach higher total capacity with fewer devices than 16Gb-based designs, reducing BOM count and module height constraints. At 5600 Mbps per pin and 1.1V VDD, an x16-based module achieves substantial bandwidth while the DDR5 on-module PMIC handles rail conversion from the 5V auxiliary input. Designers place eight or sixteen x16 devices per 64-bit (or 80-bit ECC) module, following JEDEC DDR5 fly-by command/address routing with per-bit lane length matching. The commercial 0 to 85 C range suits client and desktop platforms.
推荐
High-Performance Computing (HPC) Memory Subsystems
HPC nodes require maximum memory bandwidth and capacity density, and the K4RHE165VB-BCWM addresses both: 5600 Mbps per pin sustains high aggregate bandwidth across multiple channels, while 24Gb per die maximizes capacity per socket. Distributor data (SMC, Octopart) explicitly designates this component for HPC systems where bandwidth and efficiency are critical. In a dual-socket server populating eight DDR5 channels, using 24Gb x16 dies increases achievable capacity per rank versus 16Gb parts, letting cluster designers fit larger working sets per node without increasing module count. The 1.1V operation yields roughly 30% better power efficiency than DDR4, directly reducing datacenter energy cost per FLOP.
推荐
Client and Gaming Desktop Platforms
Consumer desktop and gaming platforms adopt DDR5 UDIMMs built from high-density dies such as the K4RHE165VB-BCWM to reach 48 GB-class module capacities. The 1G x 16 organization matches the x16 UDIMM topology used by mainstream Intel and AMD platforms supporting DDR5-5600, a common JEDEC-standard speed point. Its 1.1V rail and DDR5 on-die features support the power and signal-integrity requirements of high-speed consumer motherboards. Enthusiast builders benefit from the larger per-die density, which enables high-capacity dual-channel kits without double-sided overcrowding, improving thermal headroom and enabling stable sustained memory clocks in air-cooled enclosures during long gaming sessions.
推荐
AI Accelerator and Machine Learning Memory
AI training and inference hosts benefit from the K4RHE165VB-BCWM's combination of density, bandwidth, and efficiency. Large model weights and activation buffers exceed on-package HBM capacity, so host-side DDR5 provides the overflow working set; 24Gb dies let each DIMM slot deliver maximum capacity, and the 5600 Mbps rate shortens data-movement stalls during batch loading. Distributor sourcing data identifies this exact MPN in AI and next-generation module supply chains. The 1.1V supply reduces the power budget that AI racks must dedicate to memory, which matters at scale where thousands of DIMMs operate continuously under load.
推荐
Networking and Edge Server Appliances
Edge servers, 5G baseband units, and network appliances use SODIMM or mini-RDIMM slots populated with DDR5 x16 dies like the K4RHE165VB-BCWM. Its commercial 0 to 85 C rating covers typical managed-temperature edge enclosures, and the 24Gb density lets compact form factors reach tens of gigabytes without expanding board area. Packet buffering, flow tables, and TLS session caches are memory-latency and capacity sensitive, making DDR5-5600 bandwidth valuable for high-throughput forwarding planes. The x16 organization simplifies layout on narrow SODIMM interconnects, and improved power efficiency reduces the thermal load on passively cooled edge hardware.
推荐
Embedded and Industrial Compute Modules
Industrial PCs, medical imaging consoles, and test-and-measurement controllers integrate soldered-down or SODIMM DDR5 using components such as the K4RHE165VB-BCWM. The 106-ball FBGA package supports automated optical inspection and reliable reflow assembly, and the mass-production status assures long-term sourcing for multi-year product lifecycles. The 0 to 85 C commercial range fits controlled industrial enclosures, and DDR5's on-die ECC improves data reliability for instrumentation logging and image buffering. Designers should follow the DDR5 fly-by topology and reference Samsung's layout guidelines for strobe length matching when integrating the device directly onto a COM Express or SMARC carrier.
推荐
推荐产品汇总
工程参考数据： K4RHE165VB-BCWM ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4RHE086VB-BCWM | K4RAH165VB-BCWM | K4RAH165VP-BCWM |
|---|---|---|---|---|
| Package | 106 FBGA | 106 FBGA - same | 106 FBGA - same | 106 FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 24 Gb (x8) | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 2G x 8 | 1G x 16 | 1G x 16 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
关键差异点
- 24Gb monolithic density maximizes capacity per module （对比 K4RAH165VB-BCWM)
- Next-generation DDR5 die with 5600 Mbps operation （对比 K4RAH165VP-BCWM)
- x16 organization simplifies consumer module layout （对比 K4RHE086VB-BCWM)
设计说明
DDR5 modules use a fly-by command/address clock topology: route CA signals from the edge connector through each DRAM in series to termination, matching flight-time skew rather than absolute length. Data lanes (DQ/DM/DQS) are point-to-point per device and must be length-matched within the group; x16 devices carry 16 DQ pairs per die, so plan via stubs carefully on the 106-ball FBGA breakout. Follow the Samsung DDR5 design guide and JEDEC DDR5 module ballout for escape routing patterns under the package.
The K4RHE165VB-BCWM operates at 1.1V VDD; DDR5 relocates power conversion onto the module via a PMIC fed from a 5V auxiliary rail. Size the PMIC for peak worst-case current: at 5600 Mbps with all banks active, per-die IDD can reach several hundred milliamps, and a 16-device module draws multiples of amps. Estimated: a 16-die module at ~0.4 A per die worst case needs a PMIC rated above 6 A continuous with fast transient response for read/write turnaround. Place bulk and 0.1 uF decoupling capacitors at each VDD ball pair per the datasheet layout section.
Do not assume DDR4 module layouts can be reused: DDR5 splits the bus into two independent subchannels per DIMM and moves VPP/VDD management to the on-module PMIC, so legacy layouts require redesign. Also verify SPD and BIOS memory-training support for the specific die density - 24Gb dies require newer memory reference code than 16Gb-based modules. Substituting the x16 part with an x8 sibling (K4RHE086VB-BCWM) changes rank organization and module capacity; re-run signal-integrity training and thermal validation after any substitution.
合规信息
Compliance data was not present in the retrieved web results; confirm RoHS/REACH status on the official Samsung product page.
