K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung
料号： K9LUGY8J7D-BCK0 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9LUGY8J7D-BCK0 概述
NAND flash memory is a non-volatile storage technology that retains data without power and forms the storage layer in solid-state drives (SSDs), eMMC/UFS modules, memory cards, and embedded systems. Within the memory hierarchy, NAND flash sits below DRAM as persistent bulk storage; 3D V-NAND stacks memory cells vertically to increase bit density while reducing cell-to-cell interference compared with planar NAND.
The K9LUGY8J7D family is designed for mass-storage applications requiring high capacity per package. Samsung's V-NAND technology improves endurance and write performance through charge-trap flash cells arranged in vertical stacks. Devices in this class interface via a standard ONFI-compliant asynchronous/DDR toggle-mode NAND interface, supporting page-program and block-erase commands managed by a host-side controller with ECC (error correcting code) such as BCH or LDPC.
Typical applications include solid-state drives, eMMC and UFS embedded storage, industrial storage modules, set-top boxes, and networking equipment requiring reliable non-volatile storage.
When designing with high-density V-NAND, the host controller must implement wear leveling, bad-block management, and refresh algorithms, and layout should follow Samsung's signal-integrity guidance for high-speed data lines.
This page synthesizes drop-in family alternatives, application guidance, and sourcing information in one place, adding value beyond the raw manufacturer datasheet. Note that many parametric values below are pending verification against the official Samsung datasheet and are marked .
直接替换替代料： K9LUGY8J7D-BCK0 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K9LUGY8J7D-BCK0 （相同外形与封装尺寸） ——差异在于 Memory Type, Cell Type, Technology, RoHS Status, Density.
快速对比工具——选择替代料号进行并排对比：
K9KUGY8J7C-BCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$9.55 / 个
查看数据手册 →K9KUGY8J7C-CCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K9JUGY8J5C-BCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K9JUGY8J5C-CCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.6 / 个
查看数据手册 →K9IUGY8J7B-BCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K9IUGY8J7B-CCK0
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1 / 个
查看数据手册 →K9LUGY8J7D-BCK0 最大额定值与电气特性
| Manufacturer | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory |
| Memory Technology | V-NAND (3D NAND flash) |
| 安装类型 | Surface Mount |
| RoHS 状态 | unknown |
K9LUGY8J7D-BCK0 standard 引脚配置指南
K9LUGY8J7D-BCK0（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K9LUGY8J7D-BCK0.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K9LUGY8J7D-BCK0 适用于 6 应用s: Solid-State Drives, Embedded eMMC / UFS Storage, Industrial Storage Modules, Set-Top Boxes and Smart TVs, Networking and Telecom Equipment, Automotive Infotainment and Telematics.
Solid-State Drives
Samsung V-NAND devices of the K9LUGY8J7D class are core storage media in client and consumer SSDs. The vertical 3D cell stacking delivers high bits per package, allowing SSD controllers to aggregate multiple dies on shared channels for parallelism. In this role the NAND connects to an SSD controller over toggle-mode/ONFI interfaces; the controller implements wear leveling, LDPC ECC, and garbage collection to manage TLC cell endurance characteristics. The design benefit is high capacity per BGA footprint with Samsung's mature V-NAND reliability record, while the trade-off is strict dependence on controller firmware quality for endurance and retention.
推荐
Embedded eMMC / UFS Storage
Raw V-NAND of this family is packaged by Samsung into eMMC and UFS embedded storage modules used in smartphones, tablets, and IoT devices. The K9LUGY8J7D-class NAND provides the non-volatile layer behind the eMMC/UFS controller, which abstracts NAND management from the host. Benefits include proven V-NAND endurance, high sequential throughput over the UFS interface, and industrial temperature options. Designers of custom embedded boards who choose raw NAND instead of finished eMMC gain cost control but must implement full flash translation layers, bad-block management, and refresh algorithms in their host controller firmware.
推荐
Industrial Storage Modules
Industrial PCs, data loggers, and factory automation systems use V-NAND like the K9LUGY8J7D-BCK0 in CFast, mSATA, and board-level storage modules. V-NAND's charge-trap cells tolerate program-disturb stress better than planar NAND, supporting the high write duty cycles of logging applications. Industrial builds benefit from fixed-BOM supply agreements on Samsung NAND and predictable endurance data for maintenance scheduling. The design consideration is that industrial controllers must implement power-fail protection circuits (bulk capacitors plus firmware checkpointing) because unexpected power loss during a program operation can corrupt the affected page.
推荐
Set-Top Boxes and Smart TVs
Broadcast and streaming set-top boxes use K9LUGY8J7D-class V-NAND for firmware storage and DVR content buffering. The BGA NAND provides gigabit-class capacity in a compact footprint, and toggle-mode interfaces keep controller pin counts low. Low standby power of V-NAND suits always-on consumer electronics, and the TLC density point keeps bill-of-material cost competitive for high-volume CE manufacturing. Designers should verify the NAND's timing modes against the SoC's NAND controller, as many CE SoCs support only a subset of toggle-mode speeds, requiring conservative timing configuration at boot.
推荐
Networking and Telecom Equipment
Routers, switches, and 5G small-cell equipment store firmware, configuration, and log data on V-NAND devices of this class. The K9LUGY8J7D-BCK0's high density enables redundant firmware banks and extended log retention on a single package. Samsung V-NAND's stable read-disturb behavior suits equipment with 24/7 read-mostly duty cycles, and the BGA package withstands vibration better than card-based storage. Telecom designers typically pair the NAND with industrial-temperature controllers and must derate endurance estimates for continuous ambient temperatures above the consumer baseline specified in the Samsung datasheet.
推荐
Automotive Infotainment and Telematics
Automotive head units, digital clusters, and telematics control units require multi-gigabyte non-volatile storage for navigation maps and media, using V-NAND like the K9LUGY8J7D-BCK0 within automotive-qualified eMMC/UFS or raw-NAND subsystems. V-NAND tolerance of wide temperature swings and high vibration environments makes it well matched to vehicle electronics, and its density supports OTA update partitioning with A/B fallback banks. Automotive designers must verify the specific ordering code's qualification level (AEC-Q100 grade or Samsung automotive qualification), since suffix variants differ, and should implement power-interruption-safe FTL firmware for cranking and load-dump scenarios.
推荐
推荐产品汇总
工程参考数据： K9LUGY8J7D-BCK0 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K9KUGY8J7C-BCK0 | K9JUGY8J5C-BCK0 | K9IUGY8J7B-BCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Generation / Revision | D revision (newest in family) | C revision (prior) | C revision, J5 family | B revision, I generation |
关键差异点
- Newest D-revision V-NAND process generation （对比 K9KUGY8J7C-BCK0)
- Longer supply longevity than older generations （对比 K9IUGY8J7B-BCK0)
- Higher capacity option within the same family （对比 K9JUGY8J5C-BCK0)
设计说明
Samsung V-NAND devices use separate VCC (core) and VCCQ (I/O) supply rails. Decouple each rail with low-ESR ceramic capacitors (typically 0.1uF per ball group plus bulk capacitance) placed as close to the BGA as possible. Verify power sequencing between VCC and VCCQ in the device datasheet before power-tree design; incorrect sequencing can stress I/O structures. Estimated rail currents depend on operating mode (read, program, erase) and should be taken from the official Samsung datasheet ICC tables, which were not available in the current verified data.
In toggle-mode/DDR operation, DQ, RE#, and WE# lines toggle at high rates. Length-match the DQ bus within the tolerance specified by Samsung's layout guide, maintain a continuous ground reference plane beneath the bus, and avoid routing data lines across plane splits. Add series termination resistors near the driver as recommended for the applicable speed grade. Simulation of the full channel (controller, PCB trace, NAND input) is recommended for first-pass success on new boards using this V-NAND generation.
The most frequent raw-NAND design errors are under-provisioned ECC (modern TLC V-NAND needs LDPC, not simple BCH), missing bad-block management in the flash translation layer, and ignoring power-fail integrity - a lost power event during program/erase can corrupt the operating page or block. Budget firmware effort accordingly, and reserve spare blocks for wear leveling. Also confirm the exact -BCK0 suffix meaning (speed grade/packing) from Samsung before ordering, since suffix variants are not interchangeable on the same PCB in all cases.
合规信息
No explicit compliance declarations for this exact ordering code were present in the retrieved web data. Samsung current-generation V-NAND is generally RoHS/lead-free compliant as standard; obtain the official declaration from Samsung Semiconductor product compliance documentation.
