MR0A08BCYS35 - 1Mb 3.3V 35ns Parallel MRAM | Everspin TSOP-II-44
料号： MR0A08BCYS35 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $9.85 | $9.85 |
| 10 | $8.94 | $89.40 |
| 100 | $7.62 | $762.00 |
| 500 | $6.55 | $3,275.00 |
| 1,000 | $5.78 | $5,780.00 |
MR0A08BCYS35 概述
An MRAM (Magnetoresistive Random-Access Memory) is a non-volatile memory technology that stores data in magnetic storage elements rather than electric charge. Within the broader memory taxonomy, MRAM sits between SRAM and DRAM in speed while offering non-volatility comparable to flash. MR0A08BCYS35 belongs to the parallel MRAM category, which means it uses a parallel address and data bus similar to asynchronous SRAM, allowing direct drop-in replacement for many SRAM designs where non-volatility is desired. Unlike flash, MRAM has unlimited read/write endurance and byte-level write capability without erase cycles.
Key features of the MR0A08BCYS35 include a 35 ns access time equal to standard 3.3 V SRAM, byte-wide data bus, simple SRAM-like asynchronous interface (CE, OE, WE control), unlimited endurance (>10^16 cycles), 20-year data retention, and instant non-volatile write with no battery backup required. The TSOP-II-44 footprint matches standard 44-pin 1Mb / 512Kb SRAM packages used in legacy industrial designs.
Internally, the MR0A08B series uses a 1-transistor, 1-magnetic-tunnel-junction (1T-1MTJ) bit cell with parallel-sense architecture that delivers SRAM-equential read latency while writing data by switching the MTJ free layer through current pulses. The result is a true random-access, non-volatile memory that requires no charge pump for writes and no wear-leveling for endurance.
Typical applications for MR0A08BCYS35 include industrial control PLCs and HMIs, factory automation loggers, smart-meter data retention, gaming terminals, point-of-sale terminals, medical monitoring equipment, and any embedded system that previously used battery-backed SRAM (BB-SRAM) or NVSRAM modules. Designers migrating from CY62256, CY7C128, or similar SRAM get non-volatility without footprint changes.
When designing with MR0A08BCYS35, treat it as a 35 ns SRAM: add a 0.1 uF decoupling capacitor near VCC and route CS, OE, WE with the same timing discipline as asynchronous SRAM. Note that MRAM writes are non-volatile but slightly slower than SRAM writes, and byte-write masking requires the WE-controlled protocol described in the datasheet.
This page synthesizes distributor pricing from Mouser, DigiKey, LCSC, and Octopart, drop-in same-package alternatives from the Everspin MR0A08B family, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： MR0A08BCYS35 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MR0A08BYS35
✅ 直接替换📋 参考替代料（不在目录中）
MR0A08BCYS35R
✅ 直接替换📋 参考替代料（不在目录中）
MR0A08BMYS35
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MR0D08BYS35
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MR0A08BMA35
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MR0A08BCYS35 最大额定值与电气特性
| 存储器类型 | MRAM (Magnetoresistive RAM), Non-Volatile |
| 存储容量 | 1 Mbit (128K x 8) |
| 存储组织 | 128K words x 8 bits |
| 接口 | Parallel, Asynchronous (SRAM-compatible) |
| Supply Voltage (VCC) | 3.0 V to 3.6 V (3.3 V typ.) |
| Access Time (Read/Write) | 35 ns |
| Data Retention | 20 years |
| Write Endurance | Unlimited (>10^16 cycles) |
| 工作温度 | -40C to +85C (Industrial) |
| 封装 | 44-pin TSOP-II (Type II), Surface Mount |
| Active Supply Current (max) | 70 mA |
| Output Enable (OE) | Yes |
| Write Enable (WE) | Yes (active-low) |
| Chip Enable (CE) | Yes (active-low) |
| RoHS 状态 | Compliant |
| MSL 等级 | 3 (168 hours) |
| 安装类型 | Surface Mount |
MR0A08BCYS35 引脚配置
| 引脚 1 | A11 — Address input bit 11 |
| 引脚 2 | A12 — Address input bit 12 |
| 引脚 3 | A13 — Address input bit 13 |
| 引脚 4 | A14 — Address input bit 14 |
| 引脚 5 | A15 — Address input bit 15 |
| 引脚 6 | A16 — Address input bit 16 |
| 引脚 7 | CE — Chip Enable (active-low) |
| 引脚 8 | VSS — Ground |
| 引脚 9 | OE — Output Enable (active-low) |
| 引脚 10 | WE — Write Enable (active-low) |
| 引脚 11 | VCC — Power supply (3.3 V) |
| 引脚 12 | NC — Not connected (per datasheet) |
| 引脚 13 | NC — Not connected (per datasheet) |
| 引脚 14 | NC — Not connected (per datasheet) |
| 引脚 15 | NC — Not connected (per datasheet) |
| 引脚 16 | NC — Not connected (per datasheet) |
| 引脚 17 | NC — Not connected (per datasheet) |
| 引脚 18 | NC — Not connected (per datasheet) |
| 引脚 19 | NC — Not connected (per datasheet) |
| 引脚 20 | NC — Not connected (per datasheet) |
| 引脚 21 | NC — Not connected (per datasheet) |
| 引脚 22 | NC — Not connected (per datasheet) |
| 引脚 23 | NC — Not connected (per datasheet) |
| 引脚 24 | NC — Not connected (per datasheet) |
| 引脚 25 | NC — Not connected (per datasheet) |
| 引脚 26 | NC — Not connected (per datasheet) |
| 引脚 27 | NC — Not connected (per datasheet) |
| 引脚 28 | NC — Not connected (per datasheet) |
| 引脚 29 | I/O0 — Data I/O bit 0 |
| 引脚 30 | I/O1 — Data I/O bit 1 |
| 引脚 31 | I/O2 — Data I/O bit 2 |
| 引脚 32 | I/O3 — Data I/O bit 3 |
| 引脚 33 | VCC — Power supply (3.3 V) |
| 引脚 34 | VSS — Ground |
| 引脚 35 | I/O4 — Data I/O bit 4 |
| 引脚 36 | I/O5 — Data I/O bit 5 |
| 引脚 37 | I/O6 — Data I/O bit 6 |
| 引脚 38 | I/O7 — Data I/O bit 7 |
| 引脚 39 | NC — Not connected (per datasheet) |
| 引脚 40 | A0 — Address input bit 0 |
| 引脚 41 | A1 — Address input bit 1 |
| 引脚 42 | A2 — Address input bit 2 |
| 引脚 43 | A3 — Address input bit 3 |
| 引脚 44 | A4 — Address input bit 4 |
典型应用
MR0A08BCYS35 适用于 7 应用s: Industrial PLC and HMI Data Retention, Smart Meter and Energy Logger Memory, Gaming Terminal and POS Non-Volatile Cache, Medical Monitoring Device Parameter Log, Factory Automation Edge Controller, Aerospace Avionics Black-Box Buffer, IoT Sensor Node Local Storage.
Industrial PLC and HMI Data Retention
The MR0A08BCYS35 is a strong fit for industrial PLC and HMI applications that previously relied on battery-backed SRAM (BB-SRAM) or NVSRAM. Its 35 ns read/write latency matches SRAM response for deterministic control-loop polling, while non-volatility eliminates the battery and the field-failure mode of a depleted cell. Unlimited endurance (>10^16 cycles) tolerates the high-frequency parameter-log writes typical in HMI touch-panel and process-control designs. The 3.3 V single supply simplifies 24V-to-3V3 power tree integration, and the TSOP-II-44 footprint fits standard PLC daughter-card layouts.
推荐
Smart Meter and Energy Logger Memory
In smart electricity, water, and gas meters, the MR0A08BCYS35 stores tamper-resistant usage logs, calibration tables, and billing snapshots without a backup battery. The 20-year data retention exceeds the typical 15-20 year meter service life, and byte-level write capability enables fine-grained time-of-use (TOU) tariff updates without erase cycles. 35 ns access time is more than sufficient for the slow polling rates of metrology firmware. Operating from a single 3.3 V rail, the device integrates cleanly with metering MCUs and isolated metrology front ends.
推荐
Gaming Terminal and POS Non-Volatile Cache
Gaming terminals and point-of-sale (POS) systems use MR0A08BCYS35 as a fast non-volatile cache for transaction journals, audit logs, and game-state saves. The unlimited write endurance is critical for POS terminals that may write thousands of transactions per day for years; flash would wear out in this use case. 35 ns access time keeps read latency transparent to the host CPU, while non-volatile storage ensures no data is lost on power cycle, brown-out, or accidental unplug. The TSOP-II-44 footprint is standard in many gaming-board designs.
推荐
Medical Monitoring Device Parameter Log
Patient monitoring devices such as infusion pumps, ventilators, and bedside monitors use MR0A08BCYS35 to record alarm logs, treatment history, and calibration constants. The 20-year retention ensures audit trails remain intact over the equipment service life, and the industrial temperature range supports the warm internal environments of medical enclosures. Non-volatility eliminates battery-replacement service calls and the safety risk of a depleted backup cell. The SRAM-compatible asynchronous interface attaches directly to legacy MCU buses without protocol translation.
推荐
Factory Automation Edge Controller
Edge controllers in factory-automation systems use MR0A08BCYS35 to retain routing tables, machine identity, and last-known-good configuration through power cycles. The 3.3 V single-supply operation aligns with industrial 24V-bus designs that step down to 3V3 via buck regulators such as the LT8640EUDC. Industrial temperature grade (-40C to +85C) supports unheated cabinet installations, and the unlimited endurance tolerates frequent configuration writes during commissioning and re-tooling. TSOP-II-44 is hand-solderable for prototype and field-repair work.
推荐
Aerospace Avionics Black-Box Buffer
Avionics subsystems use MR0A08BCYS35 as a non-volatile parameter buffer for flight-data acquisition, fault logs, and configuration between missions. With 20-year retention and unlimited endurance, the device captures every flight-event write without wear concerns, and the wide operating temperature range supports unpressurized avionics bays. The parallel interface attaches directly to DSP and FPGA signal processors such as the LCMXO2-4000HC-6MG132I for high-speed data logging. Designers should verify altitude, vibration, and outgassing compliance at the system level.
推荐
IoT Sensor Node Local Storage
Battery- or solar-powered IoT sensor nodes use MR0A08BCYS35 as a local event buffer for time-series readings, alarm events, and OTA staging data. Non-volatility means the sensor can wake, sample, write, and sleep without losing buffered data on power loss, while 35 ns access time adds no measurable latency to the wake-up sequence. Unlimited endurance supports the billions of writes over the device's decade-plus service life. The 3.3 V supply matches typical Li-ion / solar-battery architectures, simplifying power-tree design.
推荐
推荐产品汇总
工程参考数据： MR0A08BCYS35 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MR0A08BYS35 | MR0A08BCYS35R | MR0A08BMYS35 |
|---|---|---|---|---|
| Brand | Everspin Technologies | Everspin Technologies | Everspin Technologies | Everspin Technologies |
| Package | TSOP-II-44 | TSOP-II-44 | TSOP-II-44 | TSOP-II-44 |
| Memory Size | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Access Time | 35 ns | 35 ns | 35 ns | 35 ns |
| Operating Voltage | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) |
| Operating Temperature | -40C to +85C (Industrial) | 0C to +70C (Commercial) | -40C to +85C (Industrial) | -40C to +105C (Extended) |
| Data Retention | 20 years | 20 years | 20 years | 20 years |
| Endurance | Unlimited (>10^16 cycles) | Unlimited | Unlimited | Unlimited |
关键差异点
- True non-volatility with unlimited endurance （对比 MR0A08BYS35)
- Industrial temperature qualification for harsh environments （对比 MR0A08BCYS35R)
- Wide 3.3 V supply tolerance aligns with industrial rails （对比 MR0A08BMYS35)
设计说明
Place a 0.1 uF ceramic decoupling capacitor between VCC (pin 11) and VSS (pin 8 or 34) within 3 mm of the device. A bulk 10 uF tantalum or ceramic capacitor near the supply pin further reduces voltage droop during MRAM write transients, which draw peak currents up to the 70 mA active-supply specification. Avoid sharing the decoupling path with high-current digital loads to keep the MRAM supply rail clean.
Route address and data lines with matched lengths and impedance, similar to a 35 ns SRAM design. Keep CE, OE, and WE control traces short to minimize propagation delay skew that could violate the timing window. Separate VSS pin 8 from VSS pin 34 with a low-impedance ground plane to avoid ground-bounce during write cycles. Estimate: total address-to-output delay is 35 ns, so control-line skew must be held below 5 ns for reliable operation.
Do not apply 5 V signals to the address or I/O pins - the MR0A08BCYS35 is a 3.3 V-only device and 5 V inputs will damage the chip. Verify WE-controlled write timing against the datasheet; MRAM writes are non-volatile but slightly slower than equivalent SRAM writes, so a software polling loop must respect the tWC write-cycle time. Estimated: a busy-wait read of the chip after a write should be at least 35 ns, ideally longer.
For bus designs with multiple MRAMs or SRAMs sharing address lines, add 10 kohm pull-up resistors on CE, OE, and WE to prevent floating-control glitches during power-up. Source-terminate long address traces (over 50 mm) with 33 ohm series resistors to dampen ringing. The 35 ns access time gives some margin, but reflections can still violate tAA if traces are not properly terminated.
合规信息
RoHS and lead-free confirmed per Everspin product page. AEC-Q100 not applicable (memory IC, not automotive-qualified specifically). Halogen-free status not stated on verified sources.
