MT48LC8M16A2P-75IT - 128Mb SDRAM 8Mx16 133MHz 54-TSOP II
料号： MT48LC8M16A2P-75IT ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $7.85 | $7.85 |
| 10 | $6.42 | $64.20 |
| 100 | $4.95 | $495.00 |
| 500 | $4.18 | $2,090.00 |
| 1,000 | $3.62 | $3,620.00 |
MT48LC8M16A2P-75IT 概述
An SDRAM is a dynamic random-access memory synchronized to a system clock, internally divided into multiple banks that allow interleaved read/write bursts. SDRAM sits in the memory hierarchy between processor registers and bulk storage, displacing older asynchronous DRAM by adding burst-mode access, programmable CAS latency, and pipeline-friendly timing. SDRAM is the predecessor of DDR SDRAM and is now used primarily for legacy systems, industrial controllers, and cost-sensitive embedded designs where compatibility outranks raw data rate.
Key features of the MT48LCM16A2P family include 4 internal banks (BA0/BA1), programmable burst lengths of 1, 2, 4, 8 or full-page, programmable CAS latency of 2 or 3, auto-refresh and self-refresh modes, and a 64 ms refresh period (8192 refresh cycles). The 16-bit data bus with two-byte DQ masking (LDQM/UDQM) simplifies 16-bit and 32-bit host connections. A 5.4 ns random access (tAC) supports high-throughput page-mode bursts.
The device uses a 3.3 V CMOS process with internal VREF and clock-alignment, an on-chip delay-locked loop is NOT present (this is an SDR part, not DDR). It conforms to the JEDEC 54-TSOP II 0.400" outline. The package carries a single die routed to bond pads, then to 54 gull-wing leads on 0.8 mm pitch; the pinout follows the JEDEC 54-TSOP-II 8Mx16 standard with one additional pin reserved (NC).
Typical applications include embedded industrial controllers, legacy networking line cards, point-of-sale terminals, printers, medical instrumentation, and replacement of older 128Mbit SDRAM designs. The wide industrial temperature grade suits outdoor or factory-floor deployments, and the 128Mb density matches the working memory size of older PowerPC, MIPS, ARM7/ARM9 SoCs that natively support SDRAM.
When designing with this part, populate VDD and VSSQ with 0.1 uF + 10 uF decoupling placed within 5 mm of each supply pin, and tie CKE high during normal operation. PCB layout must route clocks with 50 ohm controlled impedance and keep DQs byte-grouped to maintain skew budget; unmatched traces cause burst errors at 133 MHz.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select between industrial/commercial temperature grades, speed bins, and modern replacements.
直接替换替代料： MT48LC8M16A2P-75IT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT48LC8M16A2P-75IT （相同外形与封装尺寸） ——差异在于 Burst Length, Interface, Memory Type, Operating Temperature, Organization.
快速对比工具——选择替代料号进行并排对比：
MT48LC8M16A2P-75IT:G
✅ 直接替换📋 参考替代料（不在目录中）
MT48LC8M16A2P-75IT:GTR
✅ 直接替换📋 参考替代料（不在目录中）
MT48LC8M16A2P-75IT
✅ 直接替换✓ 有现货
$3.62 / 个
查看数据手册 →AS4C8M16SA-7TCN
✅ 直接替换📋 参考替代料（不在目录中）
IS42S81600F-7TL
✅ 直接替换📋 参考替代料（不在目录中）
W9825G6KH-6
✅ 直接替换✓ 有现货
$3.65 / 个
查看数据手册 →MT48LC8M16A2P-75IT 最大额定值与电气特性
| 存储器类型 | Synchronous DRAM (SDRAM) |
| Density | 128 Mbit |
| 存储组织 | 8M x 16 |
| Supply Voltage (VDD/VDDQ) | 3.3 V |
| Clock Frequency | 133 MHz |
| Speed Grade | -75 (7.5 ns tCK) |
| Random Access Time (tAC) | 5.4 ns |
| CAS 延迟 | Programmable 2 or 3 |
| Burst Length | 1 / 2 / 4 / 8 / Full Page |
| Internal Banks | 4 (BA0, BA1) |
| 接口 | Parallel LVTTL |
| 数据总线宽度 | 16 bits (with LDQM/UDQM byte masking) |
| Refresh | Auto-refresh / Self-refresh, 64 ms / 8192 cycles |
| 工作温度 | -40C to +85C (IT grade) |
| 封装 | 54-pin TSOP II, 0.400" outline, 0.8 mm pitch |
| 安装类型 | Surface Mount |
| Lead Finish | Lead-free (per FindIC description) |
| Compliance | RoHS compliant |
MT48LC8M16A2P-75IT 引脚配置
| 引脚 1 | VSS — Ground |
| 引脚 2 | DQ0 — Data I/O, bit 0 |
| 引脚 3 | DQ1 — Data I/O, bit 1 |
| 引脚 4 | DQ2 — Data I/O, bit 2 |
| 引脚 5 | DQ3 — Data I/O, bit 3 |
| 引脚 6 | VDDQ — DQ power supply, 3.3V |
| 引脚 7 | DQ4 — Data I/O, bit 4 |
| 引脚 8 | DQ5 — Data I/O, bit 5 |
| 引脚 9 | DQ6 — Data I/O, bit 6 |
| 引脚 10 | DQ7 — Data I/O, bit 7 |
| 引脚 11 | VSSQ — DQ ground |
| 引脚 12 | LDQM — Lower byte DQ mask enable |
| 引脚 13 | WE# — Write enable, active low |
| 引脚 14 | CAS# — Column address strobe, active low |
| 引脚 15 | RAS# — Row address strobe, active low |
| 引脚 16 | CS# — Chip select, active low |
| 引脚 17 | BA0 — Bank address 0 |
| 引脚 18 | BA1 — Bank address 1 |
| 引脚 19 | A11 — Address bit 11 |
| 引脚 20 | A10 — Address bit 10 / auto-precharge |
| 引脚 21 | A0 — Address bit 0 |
| 引脚 22 | A1 — Address bit 1 |
| 引脚 23 | A2 — Address bit 2 |
| 引脚 24 | A3 — Address bit 3 |
| 引脚 25 | VDD — Power supply, 3.3V |
| 引脚 26 | VSS — Ground |
| 引脚 27 | A4 — Address bit 4 |
| 引脚 28 | A5 — Address bit 5 |
| 引脚 29 | A6 — Address bit 6 |
| 引脚 30 | A7 — Address bit 7 |
| 引脚 31 | A8 — Address bit 8 |
| 引脚 32 | A9 — Address bit 9 |
| 引脚 33 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 34 | CKE — Clock enable, active high |
| 引脚 35 | CLK — Clock input |
| 引脚 36 | UDQM — Upper byte DQ mask enable |
| 引脚 37 | VSSQ — DQ ground |
| 引脚 38 | DQ15 — Data I/O, bit 15 |
| 引脚 39 | DQ14 — Data I/O, bit 14 |
| 引脚 40 | DQ13 — Data I/O, bit 13 |
| 引脚 41 | DQ12 — Data I/O, bit 12 |
| 引脚 42 | VDDQ — DQ power supply, 3.3V |
| 引脚 43 | DQ11 — Data I/O, bit 11 |
| 引脚 44 | DQ10 — Data I/O, bit 10 |
| 引脚 45 | DQ9 — Data I/O, bit 9 |
| 引脚 46 | DQ8 — Data I/O, bit 8 |
| 引脚 47 | VSS — Ground |
| 引脚 48 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 49 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 50 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 51 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 52 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 53 | NC — Not connected (per JEDEC 54-TSOP II standard) |
| 引脚 54 | VSS — Ground |
典型应用
MT48LC8M16A2P-75IT 适用于 6 应用s: Legacy Industrial Controller Main Memory, Legacy Networking Line Card Buffer, Point-of-Sale Terminal Memory, Medical Instrumentation Data Buffer, Printer Engine Frame Buffer, Test and Measurement Instrument Memory.
Legacy Industrial Controller Main Memory
The MT48LC8M16A2P-75IT is ideal as the main working memory in legacy industrial controllers based on PowerPC, MIPS, or ARM7/ARM9 SoCs that natively support SDRAM. The 128Mbit density fits typical 16MB working memory requirements for HMI, PLC, and SCADA systems. Its 16-bit data bus and JEDEC-compliant interface allow direct connection to SoC external memory controllers without glue logic. The -40C to +85C industrial temperature grade handles factory-floor and outdoor cabinet installations, while the 7.5 ns tCK keeps the controller responsive for real-time deterministic control loops.
推荐
Legacy Networking Line Card Buffer
In legacy networking line cards, the MT48LC8M16A2P-75IT serves as a packet buffer or lookup-table memory, paired with network processors that expect 16-bit SDRAM. The 133 MHz bandwidth (266 MB/s peak) handles gigabit-rate packet queues comfortably, while the 54-TSOP II footprint allows dense PCB placement alongside PHY and switch ASICs. SDRAM's lower cost-per-bit versus SRAM makes it attractive for cost-sensitive access-equipment and DSLAM line cards, where latency tolerance is in the microsecond range. The IT temperature grade supports outdoor remote cabinets.
推荐
Point-of-Sale Terminal Memory
POS terminals and electronic cash registers rely on the MT48LC8M16A2P-75IT for transaction buffers, display frame memory, and printer-spool storage. The 8Mx16 organization supports both text-mode LCD frame buffers and transaction queue storage without bank switching. SDRAM's lower power consumption in self-refresh mode suits battery-backed POS terminals, while the 3.3 V single-supply operation simplifies power design in space-constrained enclosures. The industrial temperature range accommodates kitchen and outdoor POS deployments where commercial-grade parts would fail.
推荐
Medical Instrumentation Data Buffer
Ultrasound carts, patient monitors, and laboratory analyzers use the MT48LC8M16A2P-75IT as a waveform or sample-data buffer between the analog front end and the host processor. The 133 MHz burst rate enables continuous capture of digitized signal streams without dropping samples. The 16-bit data width matches the resolution of typical 12-16 bit ADC front ends, allowing direct data transfer without alignment logic. The IT temperature grade supports clinical environments with wide thermal cycling, and the SDRAM's well-characterized timing makes medical IEC 62304 firmware verification more straightforward.
推荐
Printer Engine Frame Buffer
Office printers and multifunction devices use the MT48LC8M16A2P-75IT as the page frame buffer for the print engine. At 300 DPI, an A4 page requires roughly 8MB of memory, exactly matching the MT48LC8M16A2P-75IT's 128Mbit capacity when configured as 8Mx16. The 133 MHz throughput supports single-pass duplex printing without buffer underruns. SDRAM's lower cost versus SRAM allows economical 600x600 DPI printers, while the 54-TSOP II package handles the high-temperature reflow of motor-driver-heavy printer PCBs.
推荐
Test and Measurement Instrument Memory
Bench oscilloscopes, logic analyzers, and arbitrary waveform generators use the MT48LC8M16A2P-75IT as deep-sample storage between the ADC and the display processor. The 133 MHz parallel interface allows direct connection to high-speed 8/16-bit ADCs without FIFO bridges. SDRAM's deterministic refresh and well-defined burst modes simplify acquisition-timing analysis. The 54-TSOP II footprint supports retrofits into existing instrument platforms that already have a 54-TSOP landing pattern, and the industrial temperature grade accommodates the elevated ambient inside instrument enclosures.
推荐
推荐产品汇总
工程参考数据： MT48LC8M16A2P-75IT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT48LC8M16A2P-75IT:G | MT48LC8M16A2P-75IT:GTR | AS4C8M16SA-7TCN | IS42S81600F-7TL | W9825G6KH-6 |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | ISSI | Winbond |
| Package | 54-pin TSOP II (0.400") | 54-pin TSOP II - same | 54-pin TSOP II - same | 54-pin TSOP II - same | 54-pin TSOP II - same | 54-pin TSOP II - same |
| Density | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit | 128 Mbit | 64 Mbit (half density) |
| Organization | 8M x 16 | 8M x 16 | 8M x 16 | 8M x 16 | 8M x 16 | 4M x 16 (different density) |
| Clock Frequency | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 166 MHz (higher) |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Operating Temperature | -40C to +85C (IT grade) | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C |
| RoHS Compliance | Non-RoHS (Pb-bearing) | RoHS compliant (Pb-free) | RoHS compliant (Pb-free) | RoHS compliant | RoHS compliant | RoHS compliant |
| Lifecycle Status | NRND | NRND | NRND | Active | Active | Active |
| Approx. Unit Price (1 qty) | $7.85 | $7.50 - $8.00 (DigiKey) | $7.50 - $8.00 (DigiKey) | $5.50 - $6.50 | $6.00 - $7.00 | $3.50 - $4.50 (lower density) |
关键差异点
- Same-brand Pb-free alternative ensures long-term RoHS compliance （对比 MT48LC8M16A2P-75IT:G)
- Alliance Memory provides active lifecycle alternative to NRND Micron part （对比 AS4C8M16SA-7TCN)
- ISSI offers independent second-source with same JEDEC compliance （对比 IS42S81600F-7TL)
设计说明
Place 0.1 uF X7R capacitors within 5 mm of every VDD and VDDQ pin, and add 10 uF bulk capacitors near the package corners. SDRAM draws roughly 50-80 mA active and 1-2 mA in self-refresh; the bulk capacitors absorb the transient when entering/exiting self-refresh. Failing to decouple properly causes row/column-address errors and intermittent read failures at 133 MHz. Estimated: with 4 internal banks and burst reads, peak transient can reach 150 mA for 10 ns - the 10 uF bulk handles this without VDD droop below 3.0 V.
Route CLK, CKE, CS#, RAS#, CAS#, WE# as a matched bus with 50 ohm controlled impedance and length-matched within +/- 0.5 cm. Route DQ0-DQ15 in a byte group (DQ0-DQ7 separated from DQ8-DQ15) and length-match each byte group to within +/- 0.2 cm of CLK. Impedance mismatches cause reflection-induced setup/hold violations. Use a 4-layer PCB minimum with a continuous ground plane on layer 2 directly beneath the SDRAM; split or missing ground planes create EMI and signal-integrity problems.
The most common failure mode is incorrect mode-register programming during the initialization sequence. The datasheet specifies a strict power-on sequence: apply stable VDD/VDDQ, assert CKE high after 100 us, issue PRECHARGE ALL, then AUTO-REFRESH x 2 cycles, then LOAD MODE REGISTER. Skipping the AUTO-REFRESH cycles leaves the SDRAM in an undefined state, causing read data corruption. Also ensure LDQM and UDQM are pulled high (masking disabled) before the first read; leaving them low silently masks data and produces all-zero reads.
Estimated: at full 133 MHz continuous reads, the MT48LC8M16A2P-75IT dissipates around 200-300 mW. With 54-TSOP II theta_JA of approximately 60 C/W on a 4-layer PCB, the junction-to-ambient rise is 12-18 C. Industrial temperature grade (85C max) gives 70-85 C ambient headroom, sufficient for enclosed industrial cabinets without a heatsink. Forced-air cooling is not required.
Use series 33 ohm damping resistors on the CLK output of the host controller if the trace length exceeds 5 cm. SDRAM's edge rate (1-2 ns) creates ringing on under-terminated clocks, which the SDRAM interprets as multiple clock edges. Terminate DQM signals with 4.7 kohm pull-ups to VDDQ to prevent floating-state glitches during bus turnaround. Never let the address bus float; add 10 kohm pull-ups to A0-A11 if the host controller enters high-impedance during reset.
合规信息
Original MT48LC8M16A2P-75IT is non-RoHS (lead-bearing finish). The :G variant (MT48LC8M16A2P-75IT:G) is RoHS compliant with lead-free matte-tin plating. AEC-Q100 not applicable for industrial-grade SDRAM.
