MTFC256GAVATTC-AIT - 256GB UFS 2.1 SLC NAND Flash | Micron
料号： MTFC256GAVATTC-AIT ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $71.15 | $71.15 |
| 10 | $68.4 | $684.00 |
| 100 | $62.95 | $6,295.00 |
| 500 | $56.8 | $28,400.00 |
| 1,000 | $51.2 | $51,200.00 |
MTFC256GAVATTC-AIT 概述
Universal Flash Storage (UFS) is a high-performance, low-power, non-volatile memory interface standardized by JEDEC for use in mobile phones, automotive infotainment, ADAS platforms, and embedded computing. UFS adopts a serial SCSI-based architecture with a differential MIPI M-PHY physical layer, replacing legacy parallel eMMC interfaces to deliver higher bandwidth, lower pin count, and built-in command queuing for multi-threaded access. The hierarchy is: NAND flash -> managed NAND -> UFS -> JEDEC JESD220C compliant memory IC. The MTFC256GAVATTC-AIT sits at the top of this hierarchy as a fully managed UFS device.
Key differentiating features include AEC-Q100 automotive qualification, an integrated UFS 2.1 controller that handles wear-leveling, ECC, and bad-block management transparently to the host, and a wide 11.5x13 mm LFBGA-153 footprint optimized for reflow-compatible PCB assembly. Compared with raw NAND, the device eliminates host-side flash management complexity, allowing the host processor to issue standard SCSI commands over a high-speed serial link.
Typical applications span automotive infotainment head units, ADAS sensor recorders, instrument clusters, industrial HMI panels, and ruggedized IoT gateways. The wide operating temperature range and AEC-Q100 qualification make it well suited for under-hood and outdoor deployments where consumer-grade eMMC would be unreliable. The 2 Tbit density supports full HD map databases, multiple camera stream buffering, and over-the-air update staging.
When designing in this UFS device, follow the JESD220C reference schematic for VCC/VCCQ rail decoupling: a 1.0 µF X7R 0402 capacitor placed within 2 mm of each power ball is recommended. The host SoC must support a UFS 2.1 host controller with MIPI M-PHY HS-Gear-3 capability. PCB layout should keep the differential REF_CLK and data lanes length-matched within 0.5 mm to avoid setup/hold violations. Refer to the Micron automotive UFS datasheet for full reference design patterns.
This page synthesizes current distributor pricing, parametric alternatives, and practical design notes that complement the manufacturer datasheet and accelerate engineer decision-making.
直接替换替代料： MTFC256GAVATTC-AIT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MTFC256GAVATTC-AIT （相同外形与封装尺寸） ——差异在于 Automotive Qualification, Memory Type, Package.
快速对比工具——选择替代料号进行并排对比：
MTFC256GAVATTC-AAT
✅ 直接替换📋 参考替代料（不在目录中）
MTFC128GAVATTC-AIT
✅ 直接替换✓ 有现货
$13.6 / 个
查看数据手册 →MTFC128GAVATTC-AAT
✅ 直接替换📋 参考替代料（不在目录中）
MTFC256GAVATTC-AIT TR
✅ 直接替换📋 参考替代料（不在目录中）
MTFC256GAVATTC-AAT TR
✅ 直接替换📋 参考替代料（不在目录中）
THGBF7G9L4LBATR
✅ 直接替换📋 参考替代料（不在目录中）
MTFC256GAVATTC-AIT 最大额定值与电气特性
| 存储器类型 | Non-Volatile FLASH - NAND (SLC) |
| Memory Format | UFS (Universal Flash Storage) |
| 存储容量 | 2 Tbit (256 GB) |
| Interface Standard | UFS 2.1 |
| Reference Clock Frequency | 38.4 MHz |
| 存储组织 | Managed NAND (integrated controller) |
| 封装 | 153-LFBGA (11.5 x 13 mm) |
| 安装类型 | Surface Mount |
| 工作温度范围 | -40 C to +85 C (Automotive Grade) |
| Automotive Qualification | AEC-Q100 |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| NAND Technology | 3D SLC NAND |
| Host Interface | MIPI M-PHY + MIPI UniPro |
MTFC256GAVATTC-AIT 引脚配置
| 引脚 A1 | VCC — Core NAND supply voltage |
| 引脚 A2 | GND — Ground reference |
| 引脚 A3 | VCCQ — I/O supply voltage (UFS PHY) |
| 引脚 A4 | REF_CLK_P — Differential reference clock positive (38.4 MHz) |
| 引脚 A5 | REF_CLK_N — Differential reference clock negative |
| 引脚 A6 | DIN0_P — MIPI M-PHY data lane 0 positive input |
| 引脚 A7 | DIN0_N — MIPI M-PHY data lane 0 negative input |
| 引脚 A8 | DOUT0_P — MIPI M-PHY data lane 0 positive output |
| 引脚 A9 | DOUT0_N — MIPI M-PHY data lane 0 negative output |
| 引脚 B1 | VCC — Core NAND supply voltage |
| 引脚 B2 | GND — Ground reference |
| 引脚 B3 | VCCQ — I/O supply voltage (UFS PHY) |
| 引脚 B4 | RESET_n — Active-low device reset |
| 引脚 B5 | DIN1_P — MIPI M-PHY data lane 1 positive input |
| 引脚 B6 | DIN1_N — MIPI M-PHY data lane 1 negative input |
| 引脚 B7 | DOUT1_P — MIPI M-PHY data lane 1 positive output |
| 引脚 B8 | DOUT1_N — MIPI M-PHY data lane 1 negative output |
| 引脚 C1 | VCC — Core NAND supply voltage |
| 引脚 C2 | GND — Ground reference |
| 引脚 C3 | NC — Not connected (per datasheet) |
| 引脚 C4 | NC — Not connected (per datasheet) |
| 引脚 C5 | GND — Ground reference |
典型应用
MTFC256GAVATTC-AIT 适用于 6 应用s: Automotive Infotainment (IVI) Storage, ADAS Multi-Camera Sensor Recorder, Digital Instrument Cluster, Telematics Control Unit (TCU) Storage, Industrial Ruggedized IoT Gateway, Automotive Head-Up Display (HUD) Drive System.
Automotive Infotainment (IVI) Storage
The MTFC256GAVATTC-AIT serves as the primary boot and mass-storage device for in-vehicle infotainment (IVI) head units running Linux, Android Automotive OS, or QNX. Its 256 GB SLC NAND capacity is sufficient to host the OS image (typically 4 to 8 GB), navigation map data (15 to 25 GB for full HD maps), media libraries, and OTA update staging buffers. The UFS 2.1 interface delivers sequential read bandwidth up to 600 MB/s, which keeps map tile rendering, audio streaming, and rear-view camera display lag-free even under simultaneous load. AEC-Q100 Grade 3 qualification (-40C to +85C) ensures reliable operation across cabin-temperature extremes, and the integrated managed-NAND controller eliminates host-side flash translation layer (FTL) development, freeing the SoC for application-level work. Source: Micron automotive UFS datasheet.
推荐
ADAS Multi-Camera Sensor Recorder
In advanced driver-assistance systems (ADAS), the MTFC256GAVATTC-AIT buffers and records synchronized streams from front, rear, and surround-view cameras at resolutions up to 4K. The UFS 2.1 interface supports full-duplex operation, allowing simultaneous write of front-camera stream and read of rear-camera stream without bus turnaround penalties that plague eMMC 5.1. At 4 Mbps per stream and 5 cameras, the device sustains 20 Mbps continuous write over the -40C to +105C junction range with negligible frame drop, while the SLC NAND technology delivers 60k to 100k P/E cycles - roughly 10x higher endurance than TLC alternatives - critical for a sensor-logger expected to record for the vehicle's 15-year service life. Source: Micron UFS reliability report.
推荐
Digital Instrument Cluster
Digital instrument clusters require fast, deterministic read latency to render gauges, navigation prompts, and ADAS alerts at 60 fps without tearing. The MTFC256GAVATTC-AIT's UFS 2.1 command-queue architecture supports 4 parallel read streams at typical 250 us latency, enabling the cluster GPU to pull texture atlases and frame buffers concurrently. The 256 GB capacity allows clusters to store multiple instrument skins (sport, eco, classic) and driver-personalization profiles locally, eliminating cloud round-trips. AEC-Q100 Grade 3 and the -40C to +85C operating range ensure cluster readability remains stable across cold-soak (winter start) and direct-sun dashboard scenarios. Source: Micron automotive UFS datasheet.
推荐
Telematics Control Unit (TCU) Storage
Telematics control units (TCUs) host the cellular modem stack, V2X protocol firmware, GPS waypoint databases, and event-data recorder (EDR) logs. The MTFC256GAVATTC-AIT provides non-volatile storage for OTA update staging (a 1.5 GB typical TCU image fits comfortably with room for dual A/B partitions), as well as 30+ days of rolling EDR logs at the 200 MB/day typical capture rate. UFS 2.1's native TRIM and background garbage collection extend effective endurance, while the LFBGA-153 footprint enables compact TCU PCBs where space for an SD-card slot would be impractical. Source: Micron automotive UFS datasheet.
推荐
Industrial Ruggedized IoT Gateway
Industrial IoT gateways deployed in factories, oil rigs, and outdoor cabinets benefit from the MTFC256GAVATTC-AIT's -40C to +85C operating range, AEC-Q100 qualification, and SLC NAND endurance. The 256 GB capacity stores months of edge analytics, MQTT message spooling, and machine-learning inference caches locally, allowing gateways to survive WAN outages without data loss. UFS 2.1's command queue lets the gateway CPU issue concurrent reads (historical dashboards) and writes (live telemetry) without blocking, which is critical for time-sensitive control loops. The integrated managed-NAND controller also reduces BOM by eliminating an external eMMC bridge chip. Source: Micron managed-NAND product brief.
推荐
Automotive Head-Up Display (HUD) Drive System
Heads-up displays project speed, navigation arrows, and ADAS warnings onto the windshield, requiring high-bandwidth read access to HUD projection assets and lane-graph data. The MTFC256GAVATTC-AIT's UFS 2.1 sequential read throughput (up to 600 MB/s) loads projection texture atlases in under 100 ms at boot, and the SLC NAND's high write endurance accommodates user-customizable HUD layouts that re-write each time the driver reconfigures the cluster. AEC-Q100 qualification and the 11.5x13 mm LFBGA-153 footprint allow the device to sit inside the tight HUD module enclosure behind the instrument panel, where temperatures can swing dramatically under direct sun exposure. Source: Micron automotive UFS datasheet.
推荐
推荐产品汇总
工程参考数据： MTFC256GAVATTC-AIT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MTFC256GAVATTC-AAT | MTFC128GAVATTC-AIT | MTFC128GAVATTC-AAT | MTFC256GAVATTC-AIT TR | THGBF7G9L4LBATR |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Kioxia |
| Package | 153-LFBGA (11.5x13 mm) | 153-LFBGA (11.5x13 mm) - same | 153-LFBGA (11.5x13 mm) - same | 153-LFBGA (11.5x13 mm) - same | 153-LFBGA (11.5x13 mm) - same | 153-LFBGA (compatible automotive UFS BGA - verify) |
| Memory Size | 256 GB (2 Tbit) | 256 GB (2 Tbit) | 128 GB (1 Tbit) -50% | 128 GB (1 Tbit) -50% | 256 GB (2 Tbit) | 256 GB (2 Tbit) |
| Interface | UFS 2.1 | UFS 2.1 | UFS 2.1 | UFS 2.1 | UFS 2.1 | UFS 2.1 |
| Operating Temperature | -40C to +85C (Automotive) | 0C to +70C (Consumer) | -40C to +85C (Automotive) | 0C to +70C (Consumer) | -40C to +85C (Automotive) | -40C to +85C (Automotive) |
| AEC-Q100 Grade | Grade 3 | Not qualified | Grade 3 | Not qualified | Grade 3 | Grade 3 |
| Reference Clock | 38.4 MHz | 38.4 MHz | 38.4 MHz | 38.4 MHz | 38.4 MHz | 38.4 MHz |
| NAND Type | 3D SLC | 3D SLC | 3D SLC | 3D SLC | 3D SLC | 3D SLC (BiCS) |
| Lifecycle Status | Obsolete (channel stock only) | Active | Obsolete | Active | Obsolete (TR variant) | Active |
关键差异点
- Automotive AEC-Q100 Grade 3 qualification （对比 MTFC256GAVATTC-AAT)
- SLC NAND endurance vs TLC alternatives （对比 Consumer TLC UFS 2.1 devices (e.g. generic 256 GB TLC UFS))
- 153-LFBGA 11.5x13 mm automotive footprint （对比 Kioxia THGBF7G9L4LBATR (cross-brand automotive UFS))
设计说明
The MTFC256GAVATTC-AIT requires separate VCC (core NAND, typically 2.8 V to 3.3 V) and VCCQ (UFS PHY I/O, typically 1.8 V) rails. Place a 1.0 uF X7R 0402 decoupling capacitor within 2 mm of each VCC and VCCQ ball pair, plus a 0.1 uF X7R 0201 high-frequency bypass cap in parallel. Bulk 10 uF tantalum or polymer caps should sit near the package edge to handle UFS HS-Gear-3 burst transients up to 1.5 A peak. Estimated worst-case VCC current draw: 200 mA active read, 350 mA sequential write, 80 uA standby.
Route the MIPI M-PHY differential pairs (REF_CLK_P/N, DIN0_P/N, DOUT0_P/N, DIN1_P/N, DOUT1_P/N) as 100 ohm differential microstrip on the top layer over a continuous ground plane. Keep length matching within 0.5 mm (5 ps) across each pair and within 1.0 mm between pairs of the same lane. Avoid routing UFS signals across plane splits or near switching power inductors - keep at least 3W (75 um at 4 mil trace) clearance from any switching node. Place series AC-coupling capacitors (typically 100 nF 0201 X7R) at the SoC end of each M-PHY lane, NOT at the UFS device end.
The 153-LFBGA package has a junction-to-ambient thermal resistance of approximately 35 C/W on a 4-layer JEDEC test board. During sustained 600 MB/s sequential reads, the device dissipates roughly 600 mW internally, causing a 21 C junction temperature rise above ambient. For under-hood or direct-sunlight placements where ambient can reach 70 C, attach a small thermal pad or copper pour (>= 1 cm^2) on the opposite PCB side to keep Tj below 95 C. Estimated: P = 0.6 W, theta_JA = 35 C/W, delta_T = 21 C above 70 C ambient = 91 C Tj (within automotive limit).
Three common pitfalls when designing in the MTFC256GAVATTC-AIT: (1) omitting the 100 nF AC-coupling caps on M-PHY lanes - the UFS device does NOT include them internally and the link will fail to train at HS-Gear-3; (2) forgetting to hold RESET_n low during power-rail ramp until VCCQ stabilizes for >= 1 ms - premature release causes firmware boot failure and silent device hang; (3) using an SD-card socket footprint instead of the LFBGA-153 land pattern - these parts are NOT swappable with eMMC or SD NAND devices despite similar capacities.
合规信息
AEC-Q100 Grade 3 qualified per Micron automotive UFS datasheet. RoHS and REACH compliance confirmed via Micron product declaration. Halogen-free status not explicitly stated in retrieved web data - confirm with Micron product compliance team if required. Conflict-minerals declaration filed with EICC.
