BAT46 vs 1N5711 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BAT46 بواسطة STMicroelectronics و 1N5711 بواسطة STMicroelectronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BAT46 | 1N5711 |
|---|---|---|
| العلامة التجارية | STMicroelectronics | STMicroelectronics |
| الفئة | Diodes | Diodes |
| حالة دورة الحياة | نشط | نشط |
| Diode Type | Small signal Schottky diode | Small-signal Schottky barrier (RF) diode |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current (IF) | 150 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: VF at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Leakage Current (IR) | [DATA_NEEDED: IR at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| العلبة | DO-35 (axial, glass) | DO-35 (DO-204AH) hermetic axial-lead glass |
| نوع التركيب | Through Hole | Through-Hole |
| Configuration | Single diode | — |
| Application Class | Protection and routing operations | — |
| حالة RoHS | RoHS3 Compliant | Compliant |
| REACH Status | Unaffected | — |
| مستوى MSL | 1 (Unlimited) | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Series | BAT46 | — |
| Manufacturer Equivalents | STMicroelectronics, Vishay General Semiconductor | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |