BAT46 vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT46 sa pamamagitan ng STMicroelectronics at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
BAT46 - 100V 150mA Small Signal Schottky Diode | STMicroelectronics
BAT46 ✓ NakahandaSTMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT46 | 1N5711 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small signal Schottky diode | Small-signal Schottky barrier (RF) diode |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current (IF) | 150 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: VF at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Leakage Current (IR) | [DATA_NEEDED: IR at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Packhaging | DO-35 (axial, glass) | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Through Hole | Through-Hole |
| Configuration | Single diode | — |
| Application Class | Protection and routing operations | — |
| Tindminan RoHS | RoHS3 Compliant | Compliant |
| REACH Status | Unaffected | — |
| Level ng MSL | 1 (Unlimited) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Series | BAT46 | — |
| Manufacturer Equivalents | STMicroelectronics, Vishay General Semiconductor | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |