BAT46 vs 1N5711 比較

詳細並排比較 BAT46 由 STMicroelectronics 與 1N5711 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 ✓ 啟用中

規格比較

參數 BAT46 1N5711
品牌 STMicroelectronics STMicroelectronics
類別 Diodes Diodes
生命週期狀態 啟用中 啟用中
Diode Type Small signal Schottky diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (VR) 100 V —
Average Forward Current (IF) 150 mA —
Forward Voltage (VF) [DATA_NEEDED: VF at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
封裝 DO-35 (axial, glass) DO-35 (DO-204AH) hermetic axial-lead glass
安裝類型 Through Hole Through-Hole
Configuration Single diode —
Application Class Protection and routing operations —
RoHS 狀態 RoHS3 Compliant Compliant
REACH Status Unaffected —
MSL 等級 1 (Unlimited) —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Series BAT46 —
Manufacturer Equivalents STMicroelectronics, Vishay General Semiconductor —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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