EP3SE260H780C4N vs EP3SE260H780C3N مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP3SE260H780C4N بواسطة Intel و EP3SE260H780C3N بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP3SE260H780C4N | EP3SE260H780C3N |
|---|---|---|
| العلامة التجارية | Intel | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | NRND | نشط |
| Family | Stratix III E (Enhanced) | — |
| Logic Elements | 255,000 | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| Total RAM Bits | 16,672,768 | — |
| Embedded Memory | M9K and M144K blocks | — |
| User I/O Pins | 488 | — |
| DSP Blocks (18x18 Multipliers) | 768 | — |
| PLLs | 12 | — |
| Process Node | 65 nm CMOS | — |
| Core Voltage | 0.86 V to 1.15 V | — |
| Maximum Core Clock Frequency | 450 MHz | — |
| العلبة | 780-ball FCBGA (Flip Chip BGA) | 780-BBGA, FCBGA (H780) |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى حساسية الرطوبة (MSL) | 3 (168 hours) | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |
| درجة حرارة التشغيل | 0C to +85C (commercial) | 0 °C to +85 °C (C grade, commercial) |
| Configuration Method | Serial/Parallel via Quartus II | SRAM-based, configured via JTAG / passive / active serial / fast passive parallel |
| Series | — | Stratix® III E |
| Logic Elements (LE) | — | 255,000 |
| Embedded Memory (bits) | — | 16,672,768 |
| Number of LABs/CLBs | — | 10,200 |
| User I/Os | — | 488 |
| Number of Pins / Balls | — | 780 |
| Process Technology | — | 40 nm CMOS |
| Maximum Core Frequency | — | [DATA_NEEDED: maximum core frequency MHz] |
| Supply Voltage (VCCINT) | — | [DATA_NEEDED: VCCINT nominal V] |
| Transceivers | — | [DATA_NEEDED: number of embedded transceivers and max data rate] |
| DSP Blocks | — | [DATA_NEEDED: number of DSP blocks and precision] |
| حالة RoHS | — | Compliant (lead-free 'N' suffix) |
| Design Toolchain | — | Altera Quartus II (legacy); Intel Quartus Prime |