IMW120R045M1H vs IMZ120R045M1H مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IMW120R045M1H بواسطة Infineon و IMZ120R045M1H بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IMW120R045M1H | IMZ120R045M1H |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Technology | CoolSiC SiC Trench MOSFET | CoolSiC™ 1200 V SiC Trench MOSFET |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| تبديد القدرة (Ptot) | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | — |
| نوع التركيب | Through Hole | Through-hole |
| العلبة | PG-TO247-3-41 (TO-247-3) | TO-247-4 (PG-TO247-4-1) |
| Qualification | Industrial grade | JEDEC 47/20/22 (industrial) |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | Commutation-robust, synchronous-rectification ready |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Drain-Source Voltage (VDS max) | — | 1200 V |
| On-Resistance RDS(on) at 25°C | — | 45 mΩ |
| Continuous Drain Current (ID at Tc=25°C) | — | 52 A |
| Total Power Dissipation at Tc=25°C | — | 228 W |
| Gate Threshold Voltage VGS(th) | — | 4.5 V (typical) |
| Turn-off Gate Voltage | — | 0 V capable |
| درجة حرارة الوصلة التشغيلية | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |
| Driver Source Pin (Kelvin) | — | Yes - dedicated sense/source pin |
| حالة RoHS | — | Compliant |