IMW120R045M1H vs IMZ120R045M1H Perbandingan

Perbandingan bersamaan detil IMW120R045M1H dari Infineon dan IMZ120R045M1H dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IMW120R045M1H IMZ120R045M1H
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolSiC SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET
Drain-Source Voltage (VDS) 1200 V —
On-Resistance (RDS(on)) 45 mOhm at Tj = 25C —
Continuous Drain Current (ID) 52 A at Tc = 25C —
Dissipasi Listrik (Ptot) 228 W at Tc = 25C —
Gate Threshold Voltage (VGS(th)) 4.5 V —
Recommended Turn-On Gate Voltage 15 V —
Turn-Off Gate Voltage 0 V —
Configuration Single N-channel with built-in body diode —
Tipe Mounting Through Hole Through-hole
Paket PG-TO247-3-41 (TO-247-3) TO-247-4 (PG-TO247-4-1)
Qualification Industrial grade JEDEC 47/20/22 (industrial)
Gate Drive Compatibility IGBT-compatible gate drive —
dv/dt Control Fully controllable via gate resistor —
Body Diode Robust, suitable for synchronous rectification Commutation-robust, synchronous-rectification ready
Turn-Off Switching Losses Temperature independent —
Manufacturer Recommended Operating Margin Do not exceed 80% of maximum ratings for optimum lifetime —
Drain-Source Voltage (VDS max) — 1200 V
On-Resistance RDS(on) at 25°C — 45 mΩ
Continuous Drain Current (ID at Tc=25°C) — 52 A
Total Power Dissipation at Tc=25°C — 228 W
Gate Threshold Voltage VGS(th) — 4.5 V (typical)
Turn-off Gate Voltage — 0 V capable
Suhu Hubung Kerja — -55 °C to +175 °C
Polarity — N-Channel
Driver Source Pin (Kelvin) — Yes - dedicated sense/source pin
Status RoHS — Compliant

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