IRF1010ESTRLPBF vs IRF1010ZSTRLPBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRF1010ESTRLPBF بواسطة Infineon و IRF1010ZSTRLPBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRF1010ESTRLPBF | IRF1010ZSTRLPBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | HEXFET Advanced Process Technology |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | 63 nC |
| Operating Mode | Enhancement | Enhancement |
| Drive Voltage | 10 V (standard level) | — |
| نوع التركيب | Surface Mount | Surface Mount |
| العلبة | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 55 V |
| Continuous Drain Current (Id) | — | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | — | 94 A |
| Drain-Source On-Resistance (RDS(on)) | — | 7.5 mOhm |
| RDS(on) (alternate condition) | — | 14.0 mOhm |
| Power Dissipation (Pd) | — | 140 W at Tc |
| Junction Operating Temperature | — | 175 C (max) |
| Avalanche Rating | — | Improved repetitive avalanche rating |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: gate-source voltage] |
| حالة RoHS | — | RoHS3 Compliant (PBF lead-free suffix) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |