IRF1010ESTRLPBF vs IRF1010ZSTRLPBF तुलना
विस्तृत दोनों ओर की तुलना IRF1010ESTRLPBF द्वारा Infineon और IRF1010ZSTRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF1010ESTRLPBF | IRF1010ZSTRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | HEXFET Advanced Process Technology |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | 63 nC |
| Operating Mode | Enhancement | Enhancement |
| Drive Voltage | 10 V (standard level) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| पैकेज | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 55 V |
| Continuous Drain Current (Id) | — | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | — | 94 A |
| Drain-Source On-Resistance (RDS(on)) | — | 7.5 mOhm |
| RDS(on) (alternate condition) | — | 14.0 mOhm |
| Power Dissipation (Pd) | — | 140 W at Tc |
| Junction Operating Temperature | — | 175 C (max) |
| Avalanche Rating | — | Improved repetitive avalanche rating |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: gate-source voltage] |
| RoHS स्थिति | — | RoHS3 Compliant (PBF lead-free suffix) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |