IRF1010ESTRLPBF vs IRF1010ZSTRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF1010ESTRLPBF tarafından Infineon ve IRF1010ZSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF1010ESTRLPBF | IRF1010ZSTRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | HEXFET Advanced Process Technology |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | 63 nC |
| Operating Mode | Enhancement | Enhancement |
| Drive Voltage | 10 V (standard level) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Paket | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 55 V |
| Continuous Drain Current (Id) | — | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | — | 94 A |
| Drain-Source On-Resistance (RDS(on)) | — | 7.5 mOhm |
| RDS(on) (alternate condition) | — | 14.0 mOhm |
| Power Dissipation (Pd) | — | 140 W at Tc |
| Junction Operating Temperature | — | 175 C (max) |
| Avalanche Rating | — | Improved repetitive avalanche rating |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: gate-source voltage] |
| RoHS Durumu | — | RoHS3 Compliant (PBF lead-free suffix) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |