K9UMGB8U7M vs K9PDG08U5M مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9UMGB8U7M بواسطة Samsung Electronics و K9PDG08U5M بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ انتهى عمره الإنتاجيمقارنة المواصفات
| المعامل | K9UMGB8U7M | K9PDG08U5M |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | EEPROM |
| حالة دورة الحياة | نشط | نهاية العمر الإنتاجي |
| نوع الذاكرة | NAND Flash | NAND Flash (SLC) |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 4 Gbit |
| التنظيم | [DATA_NEEDED: Memory Organization] | x8 (multiplexed I/O) |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | — |
| جهد التغذية | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage range] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| درجة حرارة التشغيل | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| العلبة | [DATA_NEEDED: Package Type] | TSOP1-48 |
| نوع التركيب | [DATA_NEEDED: Mounting Type] | Surface Mount |
| حالة RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |