MD7P19130HSR5 vs MD7P19130HSR3 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MD7P19130HSR5 بواسطة NXP Semiconductors و MD7P19130HSR3 بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MD7P19130HSR5 | MD7P19130HSR3 |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MD7P19130HSR5 | — |
| نوع الترانزستور | LDMOS (Dual), N-Channel | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Technology | RF Power LDMOS | NXP HV7 LDMOS |
| Drain-Source Voltage (VDS) | 28 V (typical operating), 65 V (rated) | — |
| Drain Current (Continuous) | 1.25 A | — |
| Output Power (Pout) | 40 W (minimum, CW) | 40 W average (W-CDMA, single-carrier) |
| Power Gain (Gp) | 20 dB (typical at 1.99 GHz) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Frequency Band | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 | — |
| العلبة / الحالة | NI-780HS-4L (NI780HS-4 ceramic, flange mount) | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| نوع التركيب | Chassis / Flange Mount (through-hole flange) | Chassis-mount (bolt-down) with ceramic lid |
| Weight | 6.47 g | — |
| حالة RoHS | Compliant | Compliant |
| Test Conditions | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW | — |
| Drain-Source Voltage (VDS) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Power Gain | — | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | — | 30% typical at 40 W, 1987.5 MHz |
| Quiescent Drain Current (IDQ) | — | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | — | -36 dBc typical |
| Input Signal PAR | — | 7.5 dB @ 0.01% probability on CCDF |
| Device Output Signal PAR | — | 6 dB @ 0.01% probability on CCDF |
| Operating Mode | — | Single-carrier W-CDMA, Class AB |